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2SK3115 Datasheet(PDF) 1 Page - NEC |
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2SK3115 Datasheet(HTML) 1 Page - NEC |
1 / 8 page MOS FIELD EFFECT TRANSISTOR The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. © 1998, 2001 2SK3115 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE Document No. D13338EJ2V0DS00 (2nd edition) Date Published January 2001 NS CP (K) Printed in Japan DATA SHEET The mark 5 shows major revised points. DESCRIPTION The 2SK3115 is N-Channel DMOS FET device that features a low gate charge and excellent switching haracteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low gate charge QG = 26 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 6.0 A) • Gate voltage rating ±30 V • Low on-state resistance RDS(on) = 1.2 Ω MAX. (VGS = 10 V, ID = 3.0 A) • Avalanche capability ratings ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 600 V Gate to Source Voltage (VDS = 0 V) VGSS ±30 V Drain Current (DC) (TC = 25°C) ID(DC) ±6.0 A Drain Current (pulse) Note1 ID(pulse) ±24 A Total Power Dissipation (TA = 25°C) PT1 2.0 W Total Power Dissipation (TC = 25°C) PT2 35 W Channel Temperature Tch 150 °C Storage Temperature Tstg −55 to +150 °C Single Avalanche Current Note2 IAS 6.0 A Single Avalanche Energy Note2 EAS 24 mJ Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 → 0 V ORDERING INFORMATION PART NUMBER PACKAGE 2SK3115 Isolated TO-220 (Isolated TO-220) 5 |
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