MC33907-MC33908D2 datasheet(20/123 Pages) NXP

Part #	MC33907-MC33908D2

Description	Power system basis chip with high speed CAN and LIN transceivers

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Manufacturer	NXP [NXP Semiconductors]

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20

NXP Semiconductors

33907/33908

LIN output pin (continued)

VSHIFT_DIF

Difference Between Battery Shift and Ground Shift

(VSHIFT_DIF = VSHIFT_BAT - VSHIFT_GND)

0.0

–

8.0% VBAT

V

(24)

VBUS_CNT

VBUS_CNT = (VTH_REC + VTH_DOM)/2

0.475 VSUP

–

0.525 VSUP

V

(25)

VHYST

VHYST = VTH_REC - VTH_DOM

–

0.175 VSUP

V

IBUS_NO_GND

Ground Disconnection. GND = VSUP, 0 V < VBUS < 18 V, VBAT = 12 V.

Loss of Local GND does not affect communication in the remaining

network

-1.0

–

1.0

mA

(26)

IBUS_NO_BAT

VBAT disconnection. VSUP = GND, 0 V < VBUS < 18 V. Node sustains

the current that can flow under this condition. BUS remains operational.

–

100

µA

LINTSD

LIN Thermal Shutdown

–

180

–

°C

(27)

LINTSD_HYST

LIN Thermal Shutdown Hysteresis

20

°C

CLIN

LIN internal capacitor

–

10

pF

(27)

Notes

24.

This constraint refers to duty cycle D1 and D2 only.

25.

VTH_DOM: receiver threshold of the recessive to dominant LIN bus edge. VTH_REC receiver threshold of the dominant to recessive LIN bus edge.

26.

VSUP is the voltage at the input of the device (different from Vbat when a reverse current protection diode is implemented.

27.

Guaranteed by design.

Table 4. Operating range (continued)

TCASE = -40 °C to 125 °C, unless otherwise specified. VSUP = VSUP_UV_L to 40 V, unless otherwise specified. All voltages referenced to

ground. When 28 V < VSUP < 40 V, thermal dissipation must be considered (Figure 25).

Symbol

Parameter

Min.

Typ.

Max.

Unit

Notes

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MC33907-MC33908D2 Datasheet(PDF) 20 Page - NXP Semiconductors

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