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2SK974L Datasheet(PDF) 2 Page - Hitachi Semiconductor |
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2SK974L Datasheet(HTML) 2 Page - Hitachi Semiconductor |
2 / 7 page Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 60 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 100 µA VDS = 50 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 1.0 — 2.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.15 0.18 Ω ID = 2 A, VGS = 10 V * resistance ——————— ——————————– 0.20 0.25 ID = 2 A, VGS = 4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 2.4 4.0 — S ID = 2 A, VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 400 — pF VDS = 10 V, VGS = 0, ———————————————————————————————— Output capacitance Coss — 230 — pF f = 1 MHz ———————————————————————————————— Reverse transfer capacitance Crss — 60 — pF ——————————————————————————————————————————— Turn-on delay time td(on) —5 — ns ID = 2 A, VGS = 10 V, ———————————————————————————————— Rise time tr — 25 — ns RL = 15 Ω ———————————————————————————————— Turn-off delay time td(off) — 180 — ns ———————————————————————————————— Fall time tf —75 — ns ——————————————————————————————————————————— Body to drain diode forward VDF — 0.9 — V IF = 3 A, VGS = 0 voltage ——————————————————————————————————————————— Body to drain diode reverse trr — 85 — ns IF = 3 A, VGS = 0, recovery time diF/dt = 50 A/µs ——————————————————————————————————————————— * Pulse Test 2SK974 L , 2SK974 S |
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