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2SD1011 Datasheet(PDF) 1 Page - Panasonic Semiconductor

Part No. 2SD1011
Description  Silicon NPN epitaxial planer type For low-frequency amplification
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Manufacturer  PANASONIC [Panasonic Semiconductor]
Direct Link  http://www.panasonic.com/industrial/
Logo PANASONIC - Panasonic Semiconductor

2SD1011 Datasheet(HTML) 1 Page - Panasonic Semiconductor

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1
Transistor
2SD1011
Silicon NPN epitaxial planer type
For low-frequency amplification
s Features
q
High foward current transfer ratio hFE.
q
Low collector to emitter saturation voltage VCE(sat).
q
High emitter to base voltage VEBO.
s Absolute Maximum Ratings (Ta=25˚C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
5.0
±0.2
4.0
±0.2
0.45
+0.2
–0.1
0.45
+0.2
–0.1
1.27
1.27
2.54
±0.15
2
13
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
100
100
15
50
20
300
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
s Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Noise voltage
Symbol
ICBO
ICEO
VCBO
VCEO
VEBO
hFE
*
VCE(sat)
fT
NV
Conditions
VCB = 60V, IE = 0
VCE = 60V, IB = 0
IC = 10µA, IE = 0
IC = 1mA, IB = 0
IE = 10µA, IC = 0
VCE = 10V, IC = 2mA
IC = 10mA, IB = 1mA
VCB = 10V, IE = –2mA, f = 200MHz
VCE = 10V, IC = 1mA, GV = 80dB
Rg = 100kΩ, Function = FLAT
min
100
100
15
400
typ
0.05
200
80
max
100
1
1200
0.2
Unit
nA
µA
V
V
V
V
MHz
mV
*h
FE Rank classification
Rank
R
S
hFE
400 ~ 800
600 ~ 1200


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