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2SC3632 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part No. 2SC3632
Description  isc Silicon NPN Power Transistor
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Maker  ISC [Inchange Semiconductor Company Limited]
Homepage  http://www.iscsemi.cn
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2SC3632 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

   
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INCHANGE Semiconductor
isc website:www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon NPN Power Transistor
2SC3632
DESCRIPTION
·
High Collector-Emitter Voltage
·
Low collector saturation voltage
·
100% avalanche tested
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
High voltage switching.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
600
V
VCEO
Collector-Emitter Voltage
600
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
1
A
PC
Collector Power Dissipation
2.0
W
TJ
Junction Temperature
150
Tstg
Storage Temperature Range
-55~150


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