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2SC3632 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part # 2SC3632
Description  isc Silicon NPN Power Transistor
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SC3632 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
2
isc Silicon NPN Power Transistor
2SC3632
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX UNIT
VCE(sat)NOTE
Collector-Emitter Saturation Voltage IC= 400mA; IB= 80mA
1
V
VBE(sat)NOTE
Base-Emitter Saturation Voltage
IC= 400mA; IB= 80mA
1.2
V
ICBO
Collector Cutoff Current
VCB= 600V; IE= 0
10
μ
A
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
10
μ
A
hFE-1NOTE
DC Current Gain
IC= 100mA; VCE= 5V
30
120
hFE-2NOTE
DC Current Gain
IC= 500mA; VCE= 2V
5
NOTE:Pulse test PW≤350us,duty cycle ≤2%
hFE-1 Classifications
M
L
K
30-60
40-80
60-120


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