©2005 Fairchild Semiconductor Corporation

1

www.fairchildsemi.com

May 2005

RMPA1967 Rev. F

RMPA1967

US-PCS CDMA, CDMA2000-1X and WDCMA

Power Edge™ Power Amplifier Module

Features

■ Single positive-supply operation and low power and

shutdown modes

■ 40% CDMA/WCDMA efficiency at +28 dBm average output

power

■ Compact lead-free compliant, LCC package-

(3.0 x 3.0 x 1.0 mm nominal)

■ Internally matched to 50 Ohms and DC blocked RF

input/output

■ Meets CDMA2000-1XRTT/WCDMA performance require-

ments

■ Meets HSDPA performance requirements

■ Alternative pin-out to Fairchild RMPA1965

General Description

The RMPA1967 power amplifier module (PAM) is designed for

CDMA, CDMA2000-1X, WCDMA and HSDPA personal commu-

nications system (PCS) applications. The 2-stage PAM is inter-

nally matched to 50 Ohms to minimize the use of external

components and features a low-power mode to reduce standby

current and DC power consumption during peak phone usage.

High

power-added

efficiency

and

excellent

linearity

are

achieved using Fairchild RF’s InGaP Heterojunction Bipolar

Transistor (HBT) process.

Device

Functional Block Diagram

Vcc2

RF OUT

GND

GND

Vref

Vmode

RF IN

Vcc1

(paddle ground on

package bottom)

(Top View)

1

2

3

4

8

7

6

5

DC Bias Control

Input

Match

Output

Match

MMIC