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NTE81 Datasheet(PDF) 2 Page - NTE Electronics

Part No. NTE81
Description  Silicon NPN Transistor Dual Differential Amp, General Purpose Switch
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Maker  NTE [NTE Electronics]
Homepage  http://www.nteinc.com
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NTE81 Datasheet(HTML) 2 Page - NTE Electronics

   
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Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage
V(BR)CEO IC = 10mA, IB = 0, Note 2
30
V
Collector–Base Breakdown Voltage
V(BR)CBO IC = 10µA, IE = 0
60
V
Emitter–Base Breakdown Voltage
V(BR)EBO IE = 10µA, IC = 0
5
V
Collector Cutoff Current
ICEV
VCE = 50V, VBE(off) = 3V
15
nA
Base Cutoff Current
IBL
VCE = 50V, VEB(off) = 3V
30
nA
ON Characteristics (Note 2)
DC Current Gain
hFE
IC = 0.1mA, VCE = 10V
20
50
IC = 1.0mA, VCE = 10V
25
55
IC = 10mA, VCE = 10V
35
65
IC = 150mA, VCE = 1.0V
20
65
IC = 150mA, VCE = 10V
40
30
120
IC = 300mA, VCE = 10V
25
75
Collector–Emitter Saturation Voltage
VCE(sat) IC = 150mA, IB = 15mA
0.2
0.4
V
IC = 300mA, IB = 30mA
0.35
1.2
V
Base–Emitter Saturation Voltage
VBE(sat) IC = 150mA, IB = 15mA
0.6
0.95
1.3
V
IC = 300mA, IB = 30mA
2.0
V
Small–Signal Characteristics
Current Gain–Bandwidth Product
fT
IC = 20mA, VCE = 20V,
f = 100MHz
200
250
MHz
Output Capacitance
Cobo
VCB = 10V, IE = 0, f = 100kHz
3.5
8.0
pF
Input Capacitance
Cibo
VEB = 0.5V, IC = 0, f = 100kHz
15
20
pF
Switching Characteristics
Delay Time
td
VCC = 30V, IC = 150mA,
15
µs
Rise Time
tr
VBE(off) = 0.5V, IB1 = 15mA
30
µs
Storage Time
ts
VCC = 30V, IC = 150mA,
250
µs
Fall Time
tf
IB1 = IB2 = 15mA
60
µs
Note 2. Pulse Test: Pulse Width
≤ 300µs, Duty Cycle ≤ 2%.


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