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LMX2323 Datasheet(PDF) 3 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
Part No. LMX2323
Description  PLLatinum 2.0 GHz Frequency Synthesizer for RF Personal Communications
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Maker  NSC [National Semiconductor (TI)]
Homepage  http://www.national.com
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LMX2323 Datasheet(HTML) 3 Page - National Semiconductor (TI)

 
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Absolute Maximum Ratings (Note 1)
Power Supply Voltage (V
CC)
−0.3V to 6.5V
Power Supply for Charge Pump (V
P)VCC to 6.5V
Voltage on Any Pin with
GND=0V (V
I)
−0.3V to V
CC + 0.5V
Storage Temperature Range (T
S)
−65˚C to +150˚C
Lead Temperature (solder, 4 sec.) (T
L)
+260˚C
ESD - Whole Body Model (Note 2)
2 kV
Recommended Operating
Conditions (Note 1)
Power Supply Voltage (V
CC)
2.7V to 5.5V
Power Supply for Charge pump (V
P)VCC to 5.5V
Operating Temperature (T
A)
−40˚C to +85˚C
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to
the device may occur. Operating Conditions indicate conditions for which the
device is intended to be functional. For guaranteed specifications and test
conditions, see the Electrical Characteristics.
Note 2: This device is a high performance RF integrated circuit and is ESD
sensitive. Handling and assembly of this device should be done on ESD
protected workstations.
Electrical Characteristics
V
CC = 3.0V, VP = 3.0V; −40˚C < TA < 85˚C except as specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Units
GENERAL
I
CC
Power Supply Current
V
CC = 3.0V
3.5
mA
I
CC
V
CC = 2.7V to 5.5V
7.0
mA
I
CC-PWDN
V
CC = 5.5V (Note 3)
10
20
µA
f
IN
RF Operating Frequency
0.1
2.0
GHz
f
OSC
Oscillator Frequency
5
40
MHz
f
φ
Phase Detector Frequency
10
MHz
Pf
IN
RF Input Sensitivity
2.7V
≤Vcc≤ 3.0V
-15
0
dBm
3.0<Vcc
≤5.0V
-10
0
dBm
V
OSC
Oscillator Sensitivity
0.4
0.8
V
CC-0.3
V
PP
Phase Noise (Note 4)
f
IN = 900 MHz, VOSC ≥ 0.8 VPP
−86
(Note 6)
dBc/Hz
f
IN = 900 MHz, VOSC ≥ 0.4 VPP
−82
f
IN = 1800 MHz, VOSC ≥ 0.8 VPP
−82
f
IN = 1800 MHz, VOSC ≥ 0.4 VPP
−80
CHARGE PUMP
I
CPo-source
Charge Pump Output Current
V
CPo =VP/2
−4.3
mA
I
CPo-sink
V
CPo =VP/2
4.3
mA
I
CPo-Tri
Charge Pump TRI-STATE
Current
0.5
≤ V
CPo ≤ VP - 0.5
−2.5
2.5
nA
I
CPo vs
V
CPo
Charge Pump Output Current
Magnitude Variation vs Voltage
0.5
≤ V
CPo ≤ VP - 0.5
T
A = 25˚C
10
%
I
CPo-sink vs
I
CPo-source
Charge Pump Output Current
Sink vs Source Mismatch
V
CPo =VP/2
T
A = 25˚C
5%
I
CPo vs T
Charge Pump Output Current
Magnitude Variation vs
Temperature
V
CPo =VP/2
8%
DIGITAL INTERFACE (DATA, CLK,LE, CE)
V
OH
High-Level Output Voltage
I
OH = −500 µA
V
CC−0.4
V
V
OL
Low-Level Output Voltage
I
OL = −500 µA
0.4
V
V
IH
High-Level Input Voltage
(Note 5)
0.8Vcc
V
V
IL
Low-Level Input Voltage (Note 5)
0.2Vcc
V
I
IH
High-Level Input Current (Clock,
Data, Load Enable)
V
IH =VCC = 5.5V
−1.0
1.0
µA
I
IL
Low-Level Input Current (Clock,
Data, Load Enable)
V
IL =0,VCC = 5.5V
−1.0
1.0
µA
I
IH
Oscillator Input Current
V
IH =VCC = 5.5V
100
µA
I
IL
Oscillator Input Current
V
IL =0,VCC = 5.5V
−100
µA
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