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LMX2323 Datasheet(PDF) 3 Page - National Semiconductor (TI) |
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LMX2323 Datasheet(HTML) 3 Page - National Semiconductor (TI) |
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3 / 12 page  Absolute Maximum Ratings (Note 1) Power Supply Voltage (V CC) −0.3V to 6.5V Power Supply for Charge Pump (V P)VCC to 6.5V Voltage on Any Pin with GND=0V (V I) −0.3V to V CC + 0.5V Storage Temperature Range (T S) −65˚C to +150˚C Lead Temperature (solder, 4 sec.) (T L) +260˚C ESD - Whole Body Model (Note 2) 2 kV Recommended Operating Conditions (Note 1) Power Supply Voltage (V CC) 2.7V to 5.5V Power Supply for Charge pump (V P)VCC to 5.5V Operating Temperature (T A) −40˚C to +85˚C Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Conditions indicate conditions for which the device is intended to be functional. For guaranteed specifications and test conditions, see the Electrical Characteristics. Note 2: This device is a high performance RF integrated circuit and is ESD sensitive. Handling and assembly of this device should be done on ESD protected workstations. Electrical Characteristics V CC = 3.0V, VP = 3.0V; −40˚C < TA < 85˚C except as specified. Symbol Parameter Conditions Min Typ Max Units GENERAL I CC Power Supply Current V CC = 3.0V 3.5 mA I CC V CC = 2.7V to 5.5V 7.0 mA I CC-PWDN V CC = 5.5V (Note 3) 10 20 µA f IN RF Operating Frequency 0.1 2.0 GHz f OSC Oscillator Frequency 5 40 MHz f φ Phase Detector Frequency 10 MHz Pf IN RF Input Sensitivity 2.7V ≤Vcc≤ 3.0V -15 0 dBm 3.0<Vcc ≤5.0V -10 0 dBm V OSC Oscillator Sensitivity 0.4 0.8 V CC-0.3 V PP Phase Noise (Note 4) f IN = 900 MHz, VOSC ≥ 0.8 VPP −86 (Note 6) dBc/Hz f IN = 900 MHz, VOSC ≥ 0.4 VPP −82 f IN = 1800 MHz, VOSC ≥ 0.8 VPP −82 f IN = 1800 MHz, VOSC ≥ 0.4 VPP −80 CHARGE PUMP I CPo-source Charge Pump Output Current V CPo =VP/2 −4.3 mA I CPo-sink V CPo =VP/2 4.3 mA I CPo-Tri Charge Pump TRI-STATE Current 0.5 ≤ V CPo ≤ VP - 0.5 −2.5 2.5 nA I CPo vs V CPo Charge Pump Output Current Magnitude Variation vs Voltage 0.5 ≤ V CPo ≤ VP - 0.5 T A = 25˚C 10 % I CPo-sink vs I CPo-source Charge Pump Output Current Sink vs Source Mismatch V CPo =VP/2 T A = 25˚C 5% I CPo vs T Charge Pump Output Current Magnitude Variation vs Temperature V CPo =VP/2 8% DIGITAL INTERFACE (DATA, CLK,LE, CE) V OH High-Level Output Voltage I OH = −500 µA V CC−0.4 V V OL Low-Level Output Voltage I OL = −500 µA 0.4 V V IH High-Level Input Voltage (Note 5) 0.8Vcc V V IL Low-Level Input Voltage (Note 5) 0.2Vcc V I IH High-Level Input Current (Clock, Data, Load Enable) V IH =VCC = 5.5V −1.0 1.0 µA I IL Low-Level Input Current (Clock, Data, Load Enable) V IL =0,VCC = 5.5V −1.0 1.0 µA I IH Oscillator Input Current V IH =VCC = 5.5V 100 µA I IL Oscillator Input Current V IL =0,VCC = 5.5V −100 µA www.national.com 3 |
Similar Part No. - LMX2323 |
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Similar Description - LMX2323 |
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