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FSB50450 Datasheet(PDF) 1 Page - Fairchild Semiconductor

Part No. FSB50450
Description  Smart Power Module (SPM)
Download  8 Pages
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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FSB50450 Datasheet(HTML) 1 Page - Fairchild Semiconductor

   
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©2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FSB50450 Rev. B
May 2005
SPMTM
FSB50450
Smart Power Module (SPM)
Features
• 500V 3.0A 3-phase FRFET inverter including high voltage
integrated circuit (HVIC)
• 3 divided negative dc-link terminals for inverter current sens-
ing applications
• HVIC for gate driving and undervoltage protection
• 3/5V CMOS/TTL compatible, active-high interface
• Optimized for low electromagnetic interference
• Isolation voltage rating of 1500Vrms for 1min.
General Description
FSB50450 is a tiny smart power module (SPMTM) based on
FRFET technology as a compact inverter solution for small
power motor drive applications such as fan motors and water
suppliers. It is composed of 6 fast-recovery MOSFET (FRFET),
and 3 half-bridge HVICs for FRFET gate driving. FSB50450
provides low electromagnetic interference (EMI) characteristics
with optimized switching speed. Moreover, since it employs
FRFET as a power switch, it has much better ruggedness and
larger safe operation area (SOA) than that of an IGBT-based
power module or one-chip solution. The package is optimized
for the thermal performance and compactness for the use in the
built-in motor application and any other application where the
assembly space is concerned. FSB50450 is the most solution
for the compact inverter providing the energy efficiency,
compactness, and low electromagnetic interference.
Absolute Maximum Ratings
Symbol
Parameter
Conditions
Rating
Units
VPN
DC Link Input Voltage,
Drain-source Voltage of each FRFET
500
V
ID25
Each FRFET Drain Current, Continuous
TC = 25°C
1.5
A
ID80
Each FRFET Drain Current, Continuous
TC = 80°C
1.0
A
IDP
Each FRFET Drain Current, Peak
TC = 25°C, PW < 100µs
3.0
A
PD
Maximum Power Dissipation
TC = 80°C, Each FRFET
4.5
W
VCC
Control Supply Voltage
Applied between VCC and COM
20
V
VBS
High-side Bias Voltage
Applied between VB and VS
20
V
VIN
Input Signal Voltage
Applied between IN and COM
-0.3 ~ VCC+0.3
V
TJ
Operating Junction Temperature
-20 ~ 125
°C
TSTG
Storage Temperature
-50 ~ 150
°C
RθJC
Junction to Case Thermal Resistance
Each FRFET under inverter operat-
ing condition (Note 1)
8.9
°C/W
VISO
Isolation Voltage
60Hz, Sinusoidal, 1 minute, Con-
nection pins to heatsink
1500
Vrms


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