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FQB19N20C Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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FQB19N20C Datasheet(HTML) 2 Page - Fairchild Semiconductor |
2 / 9 page Rev. A, March 2004 ©2004 Fairchild Semiconductor Corporation Electrical Characteristics TC = 25°C unless otherwise noted Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 1.8mH, IAS = 19.0A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 19.0A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 200 -- -- V ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.24 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 200 V, VGS = 0 V -- -- 10 µA VDS = 160 V, TC = 125°C -- -- 100 µA IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 2.0 -- 4.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 9.5 A -- 0.14 0.17 Ω gFS Forward Transconductance VDS = 40 V, ID = 9.5 A (Note 4) -- 10.8 -- S Dynamic Characteristics Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 830 1080 pF Coss Output Capacitance -- 195 255 pF Crss Reverse Transfer Capacitance -- 85 110 pF Switching Characteristics td(on) Turn-On Delay Time VDD = 100 V, ID = 19.0 A, RG = 25 Ω (Note 4, 5) -- 15 40 ns tr Turn-On Rise Time -- 150 310 ns td(off) Turn-Off Delay Time -- 135 280 ns tf Turn-Off Fall Time -- 115 240 ns Qg Total Gate Charge VDS = 160 V, ID = 19.0 A, VGS = 10 V (Note 4, 5) -- 40.5 53.0 nC Qgs Gate-Source Charge -- 6.0 -- nC Qgd Gate-Drain Charge -- 22.5 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 19.0 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 76.0 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 19.0 A -- -- 1.5 V trr Reverse Recovery Time VGS = 0 V, IS = 19.0 A, dIF / dt = 100 A/µs (Note 4) -- 208 -- ns Qrr Reverse Recovery Charge -- 1.63 -- µC |
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