1998

©

Document No. D16181EJ1V0DS00 (1st edition)

Date Published April 2002 N CP(K)

Printed in Japan

COMPOUND TRANSISTOR

FP1 SERIES

on-chip resistor PNP silicon epitaxial transistor

For mid-speed switching

DATA SHEET

2002

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

FEATURES

•

Up to 0.7 A current drive available

•

On-chip bias resistor

•

Low power consumption during drive

QUALITY GRADES

•

Standard

Please refer to “Quality Grades on NEC Semiconductor

Devices” (Document No. C11531E) published by NEC Corporation

to know the specification of quality grade on the devices and its

recommended applications.

FP1 SERIES LISTS

Products

Marking

FP1A4A

S30

−

10

FP1L2Q

S31

0.47

4.7

FP1A3M

S32

1.0

1.0

FP1F3P

S33

2.2

10

FP1J3P

S36

3.3

10

FP1L3N

S34

4.7

10

FP1A4M

S35

10

10

PACKAGE DRAWING (UNIT: mm)

ABSOLUTE MAXIMUM RATINGS (Ta = 25

°°°°C)

Parameter

Symbol

Ratings

Unit

Collector to base voltage

−25

V

Collector to emitter voltage

−25

V

Emitter to base voltage

−10

V

Collector current (DC)

−0.7

A

Collector current (Pulse)

−1.0

A

Base current (DC)

−20

mA

Total power dissipation

200

mW

Junction temperature

150

°C

Storage temperature

−55 to +150

°C

*PW

≤ 10 ms, duty cycle ≤ 50 %