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74LVC3GU04 Datasheet(PDF) 6 Page - NXP Semiconductors

Part No. 74LVC3GU04
Description  TRIPLE INVERTER
Download  16 Pages
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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74LVC3GU04 Datasheet(HTML) 6 Page - NXP Semiconductors

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9397 750 14546
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 03 — 01 February 2005
6 of 16
Philips Semiconductors
74LVC3GU04
Triple inverter
[1]
All typical values are measured at Tamb =25 °C.
12. Dynamic characteristics
Tamb = −40 °C to +125 °C
VIH
HIGH-level input voltage
VCC = 1.65 V to 5.5 V
0.8
× V
CC
--
V
VIL
LOW-level input voltage
VCC = 1.65 V to 5.5 V
-
-
0.2
× V
CC
V
VOH
HIGH-level output voltage
VI =VIH or VIL
IO = −100 µA;
VCC = 1.65 V to 5.5 V
VCC − 0.1
-
-
V
IO = −4 mA; VCC = 1.65 V
0.95
-
-
V
IO = −8 mA; VCC = 2.3 V
1.7
-
-
V
IO = −12 mA; VCC = 2.7 V
1.9
-
-
V
IO = −24 mA; VCC = 3.0 V
2.0
-
-
V
IO = −32 mA; VCC = 4.5 V
3.4
-
-
V
VOL
LOW-level output voltage
VI =VIH or VIL
IO = 100 µA;
VCC = 1.65 V to 5.5 V
-
-
0.1
V
IO = 4 mA; VCC = 1.65 V
-
-
0.70
V
IO = 8 mA; VCC = 2.3 V
-
-
0.45
V
IO = 12 mA; VCC = 2.7 V
-
-
0.60
V
IO = 24 mA; VCC = 3.0 V
-
-
0.80
V
IO = 32 mA; VCC = 4.5 V
-
-
0.80
V
ILI
input leakage current
VI = 5.5 V or GND;
VCC = 5.5 V
--
±20
µA
ICC
quiescent supply current
VI =VCC or GND; IO = 0 A;
VCC = 5.5 V
--
40
µA
Table 8:
Static characteristics …continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Table 9:
Dynamic characteristics
GND = 0 V; for test circuit see Figure 7.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Tamb = −40 °C to +85 °C [1]
tPHL, tPLH
propagation delay
nA to nY
see Figure 6
VCC = 1.65 V to 1.95 V
0.5
2.3
5.0
ns
VCC = 2.3 V to 2.7 V
0.3
1.8
4.0
ns
VCC = 2.7 V
0.3
2.6
4.5
ns
VCC = 3.0 V to 3.6 V
0.3
2.3
3.7
ns
VCC = 4.5 V to 5.5 V
0.3
1.7
3.0
ns
CPD
power dissipation
capacitance per gate
VCC = 3.3 V
[2] [3] -7
-pF


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