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RS1E320GN Datasheet(PDF) 2 Page - Rohm

Part No. RS1E320GN
Description  Nch 30V 80A Power MOSFET
Download  12 Pages
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Maker  ROHM [Rohm]
Homepage  http://www.rohm.com
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RS1E320GN Datasheet(HTML) 2 Page - Rohm

 
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RS1E320GN
          
               
Datasheet
l
lThermal resistance
                                   
Parameter
Symbol
Values
Unit
Min.
Typ.
Max.
Thermal resistance, junction - case
RthJC*1
-
-
3.6
/W
Thermal resistance, junction - ambient
RthJA*4
-
-
41.7
/W
l
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min.
Typ.
Max.
Drain - Source breakdown
voltage
V(BR)DSS VGS = 0V, ID = 1mA
30
-
-
V
Breakdown voltage
temperature coefficient
 ΔV(BR)DSS  ID = 1mA
-
28
-
mV/
   ΔTj     referenced to 25
Zero gate voltage
drain current
IDSS
VDS = 24V, VGS = 0V
-
-
1
μA
Gate - Source leakage current
IGSS
VGS = ±20V, VDS = 0V
-
-
±100
nA
Gate threshold voltage
VGS(th)
VDS = VGS , ID = 1mA
1.2
-
2.5
V
Gate threshold voltage
temperature coefficient
 ΔVGS(th)   ID = 1mA
-
-3.87
-
mV/
   ΔTj     referenced to 25
Static drain - source
on - state resistance
RDS(on)*5
VGS = 10V, ID = 32A
-
1.4
1.9
VGS = 4.5V, ID = 32A
-
1.8
2.9
Gate resistance
RG
f=1MHz, open drain
-
1.4
-
Ω
Forward Transfer
Admittance
|Yfs|*5
VDS = 5V, ID = 32A
35.0
-
-
S
*1 Tc = 25, Limited only by maximum temperature allowed.
*2 Pw10μs , Duty cycle1%
*3 L 0.1mH, VDD = 15V, RG = 25Ω, STARTING Tj = 25Fig.3-1,3-2
*4 Mounted on a Cu board (40×40×0.8mm)
*5 Pulsed
                                             
 
                                           
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
2/10
20160517 - Rev.003


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