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NTE7152 Datasheet(PDF) 1 Page - NTE Electronics

Part No. NTE7152
Description  Integrated Circuit Hybrid Switching Voltage Regulator
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Maker  NTE [NTE Electronics]
Homepage  http://www.nteinc.com
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NTE7152 Datasheet(HTML) 1 Page - NTE Electronics

   
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NTE7152
Integrated Circuit
Hybrid Switching Voltage Regulator
Features:
D Built–In Power Transistor NPN Triple Diffused Planar
D On–Line SMPS for Color TV
D Output Voltage is Pre–Fixed – No External Adjustment is Required
Absolute Maximum Ratings:
Peak Input Voltage, VIN
900V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input Current, IIN
6A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation (TC = +100°C), PD
27W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Power Transistor Junction Temperature, TJ
+150
°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Temperature Range (TC), Topr
–20
° to +125°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg
–30
° to +125°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (Note 1)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Output Voltage
VO
VIN = 220V, IO = 500mA
101.5
103.0
104.5
V
Detecting Voltage (Fixed Output)
VO
IIN = 6mA
102.4
103.4
104.4
V
Load Regulation
RegLOAD VIN = 180V to 280V
Initial Value
±1
V
VIN = 220V, IO = 300mA to 500mA
Initial Value
±1
V
Output Ripple
VIN = 180V, IO = 500mA, Note 2
(DVIN/DVO) x 100
1% Typ.
Output Voltage Temperature
Coefficient
TC = –20° to +100°C, IIN = 6mA
±4
mV/
°C
Saturation Voltage
VCE(sat) IC = 2A, IB = 400mA
1.0
V
VBE(sat) IC = 2A, IB = 400mA
1.5
V
DC Current Gain
hFE
IC = 1A, VCE = 4V
10
30
Collector Cutoff Current
ICEX
VCE = 900V, VBE = –1.5V
1.0
mA
Emitter Cutoff Current
IEBO
VBE = 5.5V
1.0
mA
Power Transistor Thermal
Resistance
RthJC
Between Junction and Stem
Upper Surface
1.8
°C/W
Switching Time
ts
VCE = 250V, IC = 1A, IB1 = 150mA,
7
µs
tf
IB2 = 500mA
1
µs
Note 1. Recommended Case Temperature: Topr = +100°C.
Note 2.
DVIN: Input Ripple Voltage
DVO: Output Ripple Voltage


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