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SI7840DP Datasheet(PDF) 2 Page - Vishay Siliconix |
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SI7840DP Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 1 page SPICE Device Model Si7840BDP Vishay Siliconix www.vishay.com Document Number: 73244 2 04-Dec-04 SPECIFICATIONS (TJ = 25 °C UNLESS OTHERWISE NOTED) Parameter Symbol Test Conditions Simulated Data Measured Data Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 1.8 V On-State Drain Current a ID(on) VDS ≥ 5 V, V GS = 10 V 684 A VGS = 10 V, ID = 16.5 A 0.0070 0.0070 Drain-Source On-State Resistance a rDS(on) VGS = 4.5 V, ID = 13 A 0.0084 0.0084 Ω Forward Transconductance a gfs VDS = 15 V, ID = 16.5 A 17 60 S Diode Forward Voltage a VSD IS = 3.7 A, VGS = 0 V 0.74 0.75 V Dynamic b Total Gate Charge Qg 13 14 Gate-Source Charge Qgs 6 6 Gate-Drain Charge Qgd VDS = 15 V, VGS = 4.5 V, ID = 16.5 A 3.5 3.5 nC Notes a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%. b. Guaranteed by design, not subject to production testing. Documents PDF Complete Click Here & Upgrade Expanded Features Unlimited Pages |
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