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SI4532ADY Datasheet(PDF) 2 Page - Vishay Siliconix |
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SI4532ADY Datasheet(HTML) 2 Page - Vishay Siliconix |
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2 / 4 page  SPICE Device Model Si4532ADY Vishay Siliconix www.vishay.com Document Number: 70551 2 16-May-04 SPECIFICATIONS (TJ = 25 °C UNLESS OTHERWISE NOTED) Parameter Symbol Test Conditions Simulated Data Measured Data Unit Static VDS = VGS, ID = 250 µA N-Ch 1.8 Gate Threshold Voltage VGS(th) VDS = VGS, ID = −250 µA P-Ch 2.2 V VDS ≥ 5 V, V GS = 10 V N-Ch 110 On-State Drain Current a ID(on) VDS ≤ −5 V, V GS = −10 V P-Ch 62 A VGS = 10 V, ID = 4.9 A N-Ch 0.042 0.044 VGS = −10 V, I D = −3.9 A P-Ch 0.071 0.062 VGS = 4.5 V, ID = 4.1 A N-Ch 0.057 0.062 Drain-Source On-State Resistance a rDS(on) VGS = −4.5 V, I D = −3 A P-Ch 0.120 0.105 Ω VDS = 15 V, ID = 4.9 A N-Ch 9.2 11 Forward Transconductance a gfs VDS = −15 V, I D = −2.5 A P-Ch 5 5 S IS = 1.7 A, VGS = 0 V N-Ch 0.70 0.80 Diode Forward Voltage a VSD IS = −1.7 A, V GS = 0 V P-Ch −0.80 −0.82 V Dynamic b N-Ch 7.4 8 Total Gate Charge Qg P-Ch 9.6 10 N-Ch 1.4 1.4 Gate-Source Charge Qgs P-Ch 2 2 N-Ch 1.2 1.2 Gate-Drain Charge Qgd N-Channel VDS = 10 V, VGS = 10 V, ID = 4.9 A P-Channel VDS = −10 V, V GS = −10 V, I D = −3.9 A P-Ch 1.9 1.9 Nc N-Ch 8 12 Turn-On Delay Time td(on) P-Ch 12 8 N-Ch 10 10 Rise Time tr P-Ch 14 9 N-Ch 13 23 Turn-Off Delay Time td(off) P-Ch 16 21 N-Ch 17 8 Fall Time tf N-Channel VDD =10 V, RL = 10 Ω ID ≅ 1 A, V GEN = 10 V, RG = 6 Ω P-Channel VDD = −10 V, R L = 10 Ω ID ≅ −1 A, V GEN = −10 V, R G = 6 Ω P-Ch 22 10 N-Ch 24 25 Source-Drain Reverse Recovery Time trr IS = 1.7 A, di/dt = 100 A/ µs IS = −1.7 A, di/dt = 100 A/µs P-Ch 30 27 Ns Notes a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2. b. Guaranteed by design, not subject to production testing. |
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