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SI4532ADY Datasheet(PDF) 2 Page - Vishay Siliconix

Part No. SI4532ADY
Description  N- and P-Channel 30-V (D-S) MOSFET
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI4532ADY Datasheet(HTML) 2 Page - Vishay Siliconix

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SPICE Device Model Si4532ADY
Vishay Siliconix
www.vishay.com
Document Number: 70551
2
16-May-04
SPECIFICATIONS (TJ = 25
°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
Simulated
Data
Measured
Data
Unit
Static
VDS = VGS, ID = 250
µA
N-Ch
1.8
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID =
−250 µA
P-Ch
2.2
V
VDS
≥ 5 V, V
GS = 10 V
N-Ch
110
On-State Drain Current
a
ID(on)
VDS
≤ −5 V, V
GS =
−10 V
P-Ch
62
A
VGS = 10 V, ID = 4.9 A
N-Ch
0.042
0.044
VGS =
−10 V, I
D =
−3.9 A
P-Ch
0.071
0.062
VGS = 4.5 V, ID = 4.1 A
N-Ch
0.057
0.062
Drain-Source On-State Resistance
a
rDS(on)
VGS =
−4.5 V, I
D =
−3 A
P-Ch
0.120
0.105
VDS = 15 V, ID = 4.9 A
N-Ch
9.2
11
Forward Transconductance
a
gfs
VDS =
−15 V, I
D =
−2.5 A
P-Ch
5
5
S
IS = 1.7 A, VGS = 0 V
N-Ch
0.70
0.80
Diode Forward Voltage
a
VSD
IS =
−1.7 A, V
GS = 0 V
P-Ch
−0.80
−0.82
V
Dynamic
b
N-Ch
7.4
8
Total Gate Charge
Qg
P-Ch
9.6
10
N-Ch
1.4
1.4
Gate-Source Charge
Qgs
P-Ch
2
2
N-Ch
1.2
1.2
Gate-Drain Charge
Qgd
N-Channel
VDS = 10 V, VGS = 10 V, ID = 4.9 A
P-Channel
VDS =
−10 V, V
GS =
−10 V, I
D =
−3.9 A
P-Ch
1.9
1.9
Nc
N-Ch
8
12
Turn-On Delay Time
td(on)
P-Ch
12
8
N-Ch
10
10
Rise Time
tr
P-Ch
14
9
N-Ch
13
23
Turn-Off Delay Time
td(off)
P-Ch
16
21
N-Ch
17
8
Fall Time
tf
N-Channel
VDD =10 V, RL = 10
ID
≅ 1 A, V
GEN = 10 V, RG = 6
P-Channel
VDD =
−10 V, R
L = 10
ID
≅ −1 A, V
GEN =
−10 V, R
G = 6
P-Ch
22
10
N-Ch
24
25
Source-Drain Reverse Recovery Time
trr
IS = 1.7 A, di/dt = 100 A/
µs
IS =
−1.7 A, di/dt = 100 A/µs
P-Ch
30
27
Ns
Notes
a. Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2.
b. Guaranteed by design, not subject to production testing.


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