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SFH608 Datasheet(PDF) 2 Page - Vishay Siliconix |
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SFH608 Datasheet(HTML) 2 Page - Vishay Siliconix |
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www.vishay.com 2 Document Number 83664 Rev. 1.4, 26-Oct-04 SFH608 Vishay Semiconductors Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Output Coupler Parameter Test condition Symbol Value Unit Reverse voltage VR 6.0 V DC Forward current IF 50 mA Surge forward current t ≤ 10 µsI FSM 2.5 A Total power dissipation Pdiss 70 mW Parameter Test condition Symbol Value Unit Collector-emitter voltage VCE 55 V Collector-base voltage VCBO 55 V Emitter-base voltage VEBO 7.0 V Collector current IC 50 mA Surge collector current tp ≤ 1.0 ms 100 mA Total power dissipation Pdiss 150 mW Parameter Test condition Symbol Value Unit Isolation test voltage (between emitter and detector, refer to climate DIN 40046 part 2 Nov. 74) t = 1.0 s VISO 5300 VRMS Creepage ≥ 7.0 mm Clearance ≥ 7.0 mm Comparative tracking index per DIN IEC 112/VDE 0303, part 1 175 Isolation resistance VIO = 500 V, Tamb = 25 °C RIO ≥ 1012 Ω VIO = 500 V, Tamb = 100 °C RIO ≥ 1011 Ω Storage temperature range Tstg - 55 to + 150 °C Operating temperature range Tamb - 55 to + 100 °C Soldering temperature max. 10 s, dip soldering: distance to seating plane ≥ 1.5 mm Tsld 260 °C |
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