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NGD18N40CLBT4 Datasheet(PDF) 2 Page - ON Semiconductor

Part No. NGD18N40CLBT4
Description  Ignition IGBT 18 Amps, 400 Volts
Download  8 Pages
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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NGD18N40CLBT4 Datasheet(HTML) 2 Page - ON Semiconductor

   
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NGD18N40CLBT4
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UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE CHARACTERISTICS (−55
° ≤ TJ ≤ 175°C)
Characteristic
Symbol
Value
Unit
Single Pulse Collector−to−Emitter Avalanche Energy
VCC = 50 V, VGE = 5.0 V, Pk IL = 21.1 A, L = 1.8 mH, Starting TJ = 25°C
VCC = 50 V, VGE = 5.0 V, Pk IL = 16.2 A, L = 3.0 mH, Starting TJ = 25°C
VCC = 50 V, VGE = 5.0 V, Pk IL = 18.3 A, L = 1.8 mH, Starting TJ = 125°C
EAS
400
400
300
mJ
Reverse Avalanche Energy
VCC = 100 V, VGE = 20 V, Pk IL = 25.8 A, L = 6.0 mH, Starting TJ = 25°C
EAS(R)
2000
mJ
MAXIMUM SHORT−CIRCUIT TIMES (−55
°C ≤ TJ ≤ 150°C)
Short Circuit Withstand Time 1 (See Figure 17, 3 Pulses with 10 ms Period)
tsc1
750
ms
Short Circuit Withstand Time 2 (See Figure 18, 3 Pulses with 10 ms Period)
tsc2
5.0
ms
THERMAL CHARACTERISTICS
Thermal Resistance, Junction to Case
RθJC
1.3
°C/W
Thermal Resistance, Junction to Ambient
DPAK (Note 1)
RθJA
95
°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8
″ from case for 5 seconds
TL
275
°C
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Test Conditions
Temperature
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Clamp Voltage
BVCES
I =20mA
TJ = −40°C to
380
395
420
VDC
Collector−Emitter Clam Voltage
BVCES
IC = 2.0 mA
TJ = −40 C to
150
°C
380
395
420
VDC
IC = 10 mA
TJ = −40°C to
150
°C
390
405
430
Zero Gate Voltage Collector Current
ICES
TJ = 25°C
2.0
20
µADC
g
CES
VCE = 350 V,
VGE = 0V
TJ = 150°C
10
40*
µ DC
VGE = 0 V
TJ = −40°C
1.0
10
VCE = 15 V,
VGE = 0 V
TJ = 25°C
2.0
Reverse Collector−Emitter Leakage Current
IECS
TJ = 25°C
0.7
1.0
mA
g
ECS
VCE = −24 V
TJ = 150°C
12
25*
CE
TJ = −40°C
0.1
1.0
Reverse Collector−Emitter Clamp Voltage
BVCES(R)
TJ = 25°C
27
33
37
VDC
g
VCES(R)
IC = −75 mA
TJ = 150°C
30
36
40
DC
C
TJ = −40°C
25
32
35
Gate−Emitter Clamp Voltage
BVGES
IG = 5.0 mA
TJ = −40°C to
150
°C
11
13
15
VDC
Gate−Emitter Leakage Current
IGES
VGE = 10 V
TJ = −40°C to
150
°C
384
640
700
µADC
Gate Resistor (Optional)
RG
TJ = −40°C to
150
°C
70
Gate Emitter Resistor
RGE
TJ = −40°C to
150
°C
10
16
26
k
1. When surface mounted to an FR4 board using the minimum recommended pad size.
*Maximum Value of Characteristic across Temperature Range.


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