MMD60R900QRH datasheet(3/10 Pages) MGCHIP

Part #	MMD60R900QRH

Description	Low power loss by high speed switching and low on-resistance

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Manufacturer	MGCHIP [MagnaChip Semiconductor.]

Direct Link	http://www.magnachip.co.kr

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3 / 10 page

MMD60R900Q Datasheet

Jul. 2017 Revision 1.0

MagnaChip Semiconductor Ltd.

3

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Condition

Drain

– source

breakdown voltage

V(BR)DSS

600

-

V

VGS = 0V, ID = 0.25mA

Gate threshold voltage

VGS(th)

2

3

4

V

VDS = VGS, ID = 0.25mA

Zero gate voltage drain current

IDSS

-

1

uA

VDS = 600V, VGS = 0V

Gate leakage current

IGSS

-

100

nA

VGS = ±30V, VDS = 0V

Drain-source on state resistance

RDS(ON)

-

0.76

0.90

Ω

VGS = 10V, ID = 1.5A

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Condition

Input capacitance

Ciss

-

340

-

pF

VDS = 25V, VGS = 0V,

f = 1.0MHz

Output capacitance

Coss

-

337

-

Reverse transfer capacitance

Crss

-

15

-

Effective output capacitance

energy related

(3)

Co(er)

-

16

-

VDS = 0V to 480V,

VGS = 0V, f = 1.0MHz

Turn on delay time

td(on)

-

14

-

ns

VGS = 10V, RG = 25Ω,

VDS = 300V, ID = 4.4A

Rise time

tr

-

25

-

Turn off delay time

td(off)

-

56

-

Fall time

tf

-

23

-

Total gate charge

Qg

-

9.6

-

nC

VGS = 10V, VDS = 480V,

ID = 4.4A

Gate

– source charge

Qgs

-

2.5

-

Gate

– drain charge

Qgd

-

3.9

-

Gate resistance

RG

-

26

-

Ω

VGS = 0V, f = 1.0MHz

3) Co(er) is a capacitance that gives the same stored energy as Coss while VDS is rising from 0V to 80% V(BR)DSS

 Static Characteristics (T

c=25

oC unless otherwise specified)

 Dynamic Characteristics (T

c=25

oC unless otherwise specified)

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