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MCR100 Datasheet(PDF) 2 Page - ON Semiconductor |
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MCR100 Datasheet(HTML) 2 Page - ON Semiconductor |
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MCR100 Series http://onsemi.com 2 ORDERING INFORMATION Device Package Code Shipping† MCR100−003 MCR100−004 5000 Units / Bulk MCR100−006 5000 Units / Bulk MCR100−008 MCR100−3RL TO 92 (TO 226) MCR100−6RL TO−92 (TO−226) 2000 Units / Tape & Reel MCR100−6RLRA MCR100−6RLRM 2000 Units / Tape & Ammunition Box MCR100−6ZL1 2000 Units / Tape & Ammunition Box MCR100−8RL 2000 Units / Tape & Reel MCR100−003G MCR100−006G 5000 Units / Bulk MCR100−008G MCR100−3RLG TO 92 (TO 226) 2000 Units / Tubes MCR100−6RLG TO−92 (TO−226) (Pb−Free) 2000 Units / Tubes MCR100−6RLRAG (Pb−Free) 2000 Units / Tape & Reel MCR100−6RLRMG 2000 Units / Tape & Ammunition Box MCR100−6ZL1G 2000 Units / Tape & Ammunition Box MCR100−8RLG 2000 Units / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive Off−State Voltage (Note 1) (TJ = *40 to 110°C, Sine Wave, 50 to 60 Hz; Gate Open) MCR100−3 MCR100−4 MCR100−6 MCR100−8 VDRM, VRRM 100 200 400 600 V On-State RMS Current, (TC = 80°C) 180° Conduction Angles IT(RMS) 0.8 A Peak Non-Repetitive Surge Current, (1/2 Cycle, Sine Wave, 60 Hz, TJ = 25°C) ITSM 10 A Circuit Fusing Consideration, (t = 8.3 ms) I2t 0.415 A2s Forward Peak Gate Power, (TA = 25°C, Pulse Width v 1.0 ms) PGM 0.1 W Forward Average Gate Power, (TA = 25°C, t = 8.3 ms) PG(AV) 0.10 W Forward Peak Gate Current, (TA = 25°C, Pulse Width v 1.0 ms) IGM 1.0 A Reverse Peak Gate Voltage, (TA = 25°C, Pulse Width v 1.0 ms) VGRM 5.0 V Operating Junction Temperature Range @ Rate VRRM and VDRM TJ −40 to 110 °C Storage Temperature Range Tstg −40 to 150 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. |
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