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MCR100 Datasheet(PDF) 2 Page - ON Semiconductor

Part No. MCR100
Description  Sensitive Gate Silicon Controlled Rectifiers
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MCR100 Datasheet(HTML) 2 Page - ON Semiconductor

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MCR100 Series
http://onsemi.com
2
ORDERING INFORMATION
Device
Package Code
Shipping
MCR100−003
MCR100−004
5000 Units / Bulk
MCR100−006
5000 Units / Bulk
MCR100−008
MCR100−3RL
TO 92 (TO 226)
MCR100−6RL
TO−92 (TO−226)
2000 Units / Tape & Reel
MCR100−6RLRA
MCR100−6RLRM
2000 Units / Tape & Ammunition Box
MCR100−6ZL1
2000 Units / Tape & Ammunition Box
MCR100−8RL
2000 Units / Tape & Reel
MCR100−003G
MCR100−006G
5000 Units / Bulk
MCR100−008G
MCR100−3RLG
TO 92 (TO 226)
2000 Units / Tubes
MCR100−6RLG
TO−92 (TO−226)
(Pb−Free)
2000 Units / Tubes
MCR100−6RLRAG
(Pb−Free)
2000 Units / Tape & Reel
MCR100−6RLRMG
2000 Units / Tape & Ammunition Box
MCR100−6ZL1G
2000 Units / Tape & Ammunition Box
MCR100−8RLG
2000 Units / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Repetitive Off−State Voltage (Note 1)
(TJ = *40 to 110°C, Sine Wave, 50 to 60 Hz; Gate Open)
MCR100−3
MCR100−4
MCR100−6
MCR100−8
VDRM,
VRRM
100
200
400
600
V
On-State RMS Current, (TC = 80°C) 180° Conduction Angles
IT(RMS)
0.8
A
Peak Non-Repetitive Surge Current, (1/2 Cycle, Sine Wave, 60 Hz, TJ = 25°C)
ITSM
10
A
Circuit Fusing Consideration, (t = 8.3 ms)
I2t
0.415
A2s
Forward Peak Gate Power, (TA = 25°C, Pulse Width v 1.0
ms)
PGM
0.1
W
Forward Average Gate Power, (TA = 25°C, t = 8.3 ms)
PG(AV)
0.10
W
Forward Peak Gate Current, (TA = 25°C, Pulse Width v 1.0
ms)
IGM
1.0
A
Reverse Peak Gate Voltage, (TA = 25°C, Pulse Width v 1.0
ms)
VGRM
5.0
V
Operating Junction Temperature Range @ Rate VRRM and VDRM
TJ
−40 to 110
°C
Storage Temperature Range
Tstg
−40 to 150
°C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.


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