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IXFN72N55Q2 Datasheet(PDF) 2 Page - IXYS Corporation |
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IXFN72N55Q2 Datasheet(HTML) 2 Page - IXYS Corporation |
2 / 4 page IXYS reserves the right to change limits, test conditions, and dimensions. IXFN 72N55Q2 IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 Symbol Test Conditions Characteristic Values (T J = 25°C, unless otherwise specified) min. typ. max. g fs V DS = 10 V; ID = 0.5 • ID25 Note 1 40 57 S C iss 10500 pF C oss V GS = 0 V, VDS = 25 V, f = 1 MHz 1500 pF C rss 230 pF t d(on) 30 ns t r V GS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 23 ns t d(off) R G = 1 Ω (External) 58 ns t f 10 ns Q g(on) 258 nC Q gs V GS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 65 nC Q gd 123 nC R thJC 0.14 K/W R thCK 0.05 K/W Source-Drain Diode Characteristic Values (T J = 25°C, unless otherwise specified) Symbol Test Conditions min. typ. max. I S V GS = 0 V 72 A I SM Repetitive; 288 A pulse width limited by T JM V SD I F = IS, VGS = 0 V, Note 1 1.5 V t rr 250 ns Q RM 1.2 µC I RM 8A I F = 25A -di/dt = 100 A/ µs V R = 100 V Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % miniBLOC, SOT-227 B Outline M4 screws (4x) supplied Dim. Millimeter Inches Min. Max. Min. Max. A 31.50 31.88 1.240 1.255 B 7.80 8.20 0.307 0.323 C 4.09 4.29 0.161 0.169 D 4.09 4.29 0.161 0.169 E 4.09 4.29 0.161 0.169 F 14.91 15.11 0.587 0.595 G 30.12 30.30 1.186 1.193 H 38.00 38.23 1.496 1.505 J 11.68 12.22 0.460 0.481 K 8.92 9.60 0.351 0.378 L 0.76 0.84 0.030 0.033 M 12.60 12.85 0.496 0.506 N 25.15 25.42 0.990 1.001 O 1.98 2.13 0.078 0.084 P 4.95 5.97 0.195 0.235 Q 26.54 26.90 1.045 1.059 R 3.94 4.42 0.155 0.174 S 4.72 4.85 0.186 0.191 T 24.59 25.07 0.968 0.987 U -0.05 0.1 -0.002 0.004 |
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