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IRFAG30 Datasheet(PDF) 2 Page - International Rectifier |
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IRFAG30 Datasheet(HTML) 2 Page - International Rectifier |
2 / 7 page IRFAG30 2 www.irf.com Thermal Resistance Parameter Min Typ Max Units Test Conditions RthJC Junction to Case — — 1.67 RthJA Junction to Ambient — — 30 Typical socket mount °C/W Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units Test Conditions IS Continuous Source Current (Body Diode) — — 2.3 ISM Pulse Source Current (Body Diode) ➀ — — 9.2 VSD Diode Forward Voltage — — 1.8 V Tj = 25°C, IS =2.3A, VGS = 0V ➃ trr Reverse Recovery Time — — 470 nS Tj = 25°C, IF =2.3A, di/dt ≤ 100A/µs QRR Reverse Recovery Charge — — 1.7 µC VDD ≤ 50V ➃ t on Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. A For footnotes refer to the last page Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter Min Typ Max Units Test Conditions BVDSS Drain-to-Source Breakdown Voltage 1000 — — V VGS = 0V, ID = 1.0mA ∆BVDSS/∆TJ Temperature Coefficient of Breakdown — 1.4 — V/°C Reference to 25°C, ID = 1.0mA Voltage RDS(on) Static Drain-to-Source On-State — — 5.6 VGS = 10V, ID =1.5A ➃ Resistance — — 6.5 VGS =10V, ID =2.3A ➃ VGS(th) Gate Threshold Voltage 2.0 — 4.0 V VDS = VGS, ID =250µA gfs Forward Transconductance 2.1 — — S ( )VDS > 15V, IDS =1.5A ➃ IDSS Zero Gate Voltage Drain Current — — 2 5 VDS = 800V, VGS = 0V — — 250 VDS = 800V VGS = 0V, TJ = 125°C IGSS Gate-to-Source Leakage Forward — — 100 VGS = 20V IGSS Gate-to-Source Leakage Reverse — — -100 VGS = -20V Qg Total Gate Charge 3 0 — 6 8 VGS = 10V, ID = 2.3A Qgs Gate-to-Source Charge 2.5 — 6.3 nC VDS = 500V Qgd Gate-to-Drain (‘Miller’) Charge 1 6 — 3 6 td(on) Turn-On Delay Time — — 2 3 VDD = 400V*, ID =2.3A, t r Rise Time — — 4 2 RG =7..5Ω td(off) Turn-Off Delay Time — — 210 tf Fall Time — — 6 0 LS + LD Total Inductance — 6.1 — Ciss Input Capacitance — 980 VGS = 0V, VDS = 25V Coss Output Capacitance — 140 — pF f = 1.0MHz Crss Reverse Transfer Capacitance — 5 0 — nA nH ns µA Ω Measured from drain lead (6mm/0.25in. from package) to source lead (6mm/0.25in. from package) *Equipment Limitation |
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