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IRF6635 Datasheet(PDF) 2 Page - International Rectifier

Part No. IRF6635
Description  DirectFET Power MOSFET
Download  9 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRF6635 Datasheet(HTML) 2 Page - International Rectifier

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IRF6635
2
www.irf.com
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width
≤ 400µs; duty cycle ≤ 2%.
Notes:
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
BVDSS
Drain-to-Source Breakdown Voltage
30
–––
–––
V
∆ΒVDSS/∆TJ
Breakdown Voltage Temp. Coefficient
–––
24
––– mV/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
1.3
1.8
m
–––
1.8
2.4
VGS(th)
Gate Threshold Voltage
1.35
1.8
2.35
V
∆VGS(th)/∆TJ
Gate Threshold Voltage Coefficient
–––
-6.1
––– mV/°C
IDSS
Drain-to-Source Leakage Current
–––
–––
5.0
µA
–––
–––
150
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
nA
Gate-to-Source Reverse Leakage
–––
–––
-100
gfs
Forward Transconductance
45
–––
–––
S
Qg
Total Gate Charge
–––
47
71
Qgs1
Pre-Vth Gate-to-Source Charge
–––
12
–––
Qgs2
Post-Vth Gate-to-Source Charge
–––
4.7
–––
nC
Qgd
Gate-to-Drain Charge
–––
17
Qgodr
Gate Charge Overdrive
–––
13
–––
See Fig. 15
Qsw
Switch Charge (Qgs2 + Qgd)
–––
22
–––
Qoss
Output Charge
–––
29
–––
nC
RG
Gate Resistance
–––
1.0
–––
td(on)
Turn-On Delay Time
–––
21
–––
tr
Rise Time
–––
13
–––
td(off)
Turn-Off Delay Time
–––
33
–––
ns
tf
Fall Time
–––
8.3
–––
Ciss
Input Capacitance
–––
5970
–––
Coss
Output Capacitance
–––
1280
–––
pF
Crss
Reverse Transfer Capacitance
–––
600
–––
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
–––
3.5
(Body Diode)
A
ISM
Pulsed Source Current
–––
–––
250
(Body Diode)
VSD
Diode Forward Voltage
–––
–––
1.0
V
trr
Reverse Recovery Time
–––
20
30
ns
Qrr
Reverse Recovery Charge
–––
48
72
nC
VDS = 24V, VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS = 4.5V
ID = 25A
VGS = 0V
VDS = 15V
ID = 25A
TJ = 25°C, IF = 25A
di/dt = 500A/µs
TJ = 25°C, IS = 25A, VGS = 0V
showing the
integral reverse
p-n junction diode.
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 32A
VGS = 4.5V, ID = 25A
VDS = VGS, ID = 250µA
VDS = 24V, VGS = 0V
MOSFET symbol
Clamped Inductive Load
VDS = 15V, ID = 25A
Conditions
ƒ = 1.0MHz
VDS = 16V, VGS = 0V
VDD = 16V, VGS = 4.5V
VDS = 15V


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