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WS512K32NBV-15G2 Datasheet(PDF) 3 Page - List of Unclassifed Manufacturers

Part No. WS512K32NBV-15G2
Description  512Kx32 3.3V SRAM MODULE
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Maker  ETC [List of Unclassifed Manufacturers]
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WS512K32NBV-15G2 Datasheet(HTML) 3 Page - List of Unclassifed Manufacturers

   
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White Microelectronics • Phoenix, AZ • (602) 437-1520
4
WS512K32BV-XXXE
CAPACITANCE
(TA = +25
°C)
Parameter
Symbol
Conditions
Max
Unit
OE capacitance
COE
VIN = 0 V, f = 1.0 MHz
50
pF
WE1-4 capacitance
CWE
VIN = 0 V, f = 1.0 MHz
pF
HIP (PGA)
20
CQFP G2
20
CS1-4 capacitance
CCS
VIN = 0 V, f = 1.0 MHz
20
pF
Data I/O capacitance
CI/O
VI/O = 0 V, f = 1.0 MHz
20
pF
Address input capacitance
CAD
VIN = 0 V, f = 1.0 MHz
50
pF
This parameter is guaranteed by design but not tested.
TRUTH TABLE
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Min
Max
Unit
Operating Temperature
TA
-55
+125
°C
Storage Temperature
TSTG
-65
+150
°C
Signal Voltage Relative to GND
VG
-0.5
4.6
V
Junction Temperature
TJ
150
°C
Supply Voltage
VCC
-0.5
4.6
V
CS
OE
WE
Mode
Data I/O
Power
H
X
X
Standby
High Z
Standby
L
L
H
Read
Data Out
Active
L
X
L
Write
Data In
Active
L
H
H
Out Disable
High Z
Active
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Min
Max
Unit
Supply Voltage
VCC
3.0
3.6
V
Input High Voltage
VIH
2.2
VCC + 0.3
V
Input Low Voltage
VIL
-0.3
+0.8
V
DC CHARACTERISTICS
(VCC = 3.3V
± 0.3V, VSS = 0V, TA = -55°C to +125°C)
Parameter
Sym
Conditions
Units
Min
Max
Input Leakage Current
ILI
VIN = GND to VCC
10
µA
Output Leakage Current
ILO
CS = VIH, OE = VIH, VOUT = GND to VCC
10
µA
Operating Supply Current (x 32 Mode)
ICC x 32
CS = VIL, OE = VIH, f = 5MHz, VCC = 3.6V
480
mA
Standby Current
ISB
CS = VIH, OE = VIH, f = 5MHz, VCC = 3.6V
110
mA
Output Low Voltage
VOL
IOL = 8mA
0.4
V
Output High Voltage
VOH
IOH = -4.0mA
2.4
V
NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V


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