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VID50-12P1 Datasheet(PDF) 4 Page - IXYS Corporation

Part No. VID50-12P1
Description  IGBT Modules
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

VID50-12P1 Datasheet(HTML) 4 Page - IXYS Corporation

  VID50-12P1 Datasheet HTML 1Page - IXYS Corporation VID50-12P1 Datasheet HTML 2Page - IXYS Corporation VID50-12P1 Datasheet HTML 3Page - IXYS Corporation VID50-12P1 Datasheet HTML 4Page - IXYS Corporation  
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© 2003 IXYS All rights reserved
4 - 4
IXYS reserves the right to change limits, test conditions and dimensions.
VDI 50-12P1 VII 50-12P1
VID 50-12P1 VIO 50-12P1
B3
Fig. 7 Typ. turn on energy and switching
Fig. 8 Typ. turn off energy and switching
times versus collector current times
versus collector current
Fig. 9 Typ. turn on energy and switching
Fig. 10 Typ. turn off energy and switching
times versus gate resistor times
versus gate resistor
Fig. 11 Reverse biased safe operating area
Fig. 12
Typ. transient thermal impedance
RBSOA
0
204060
0
5
10
15
0
50
100
150
0
204060
0
4
8
12
0
200
400
600
0,00001 0,0001 0,001
0,01
0,1
1
10
0,0001
0,001
0,01
0,1
1
10
0
20
40
60
80
100
0
2
4
6
8
0
200
400
600
800
0
204060
80
100
0
1
2
3
4
0
40
80
120
160
single pulse
V
CE = 600 V
V
GE = ±15 V
R
G = 47 Ω
T
VJ
= 125°C
0
200
400
600
800 1000 1200 1400
0
20
40
60
V
CE = 600V
V
GE = ±15V
R
G =
47
T
VJ
= 125°C
E
on
t
d(on)
t
r
E
off
t
d(off)
t
f
E
on
t
d(on)
t
r
E
off
t
d(off)
t
f
I
C
A
I
C
A
E
off
E
on
t
t
R
G
R
G
V
CE
t
s
mJ
E
on
mJ
E
off
ns
t
ns
t
I
CM
K/W
Z
thJC
IGBT
diode
V
A
mJ
ns
ns
mJ
42T120
42T120
42T120
42T120
42T120
V
CE = 600 V
V
GE = ±15 V
I
C
= 25 A
T
VJ
= 125°C
R
G = 47 Ω
T
VJ = 125°C
V
CE = 600 V
V
GE = ±15 V
I
C
= 25 A
T
VJ
= 125°C
MDI...50-12P1


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