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AFIC10275N Datasheet(PDF) 8 Page - NXP Semiconductors

Part # AFIC10275N
Description  RF LDMOS Wideband Integrated Power Amplifiers
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

AFIC10275N Datasheet(HTML) 8 Page - NXP Semiconductors

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RF Device Data
Freescale Semiconductor, Inc.
AFIC10275N AFIC10275GN
TYPICAL CHARACTERISTICS — 1090 MHz
REFERENCE CIRCUIT
0.15
Pin, INPUT POWER (WATTS) PEAK
Figure 7. Power Gain, Drain Efficiency and Output
Power versus Input Power
32
31
30
0
90
70
50
10
150
100
29
28
27
26
25
24
0.2
0.25
0.3
0.35
30
50
Pout
0.1
0.05
Gps
200
250
300
33
34
35
0.0
Pin, INPUT POWER (WATTS) PEAK
250
150
300
200
0.1
0.15
50
0
100
0.05
0.0
0.2
0.25
0.3
0.35
0.4
Figure 8. Output Power versus Input Power
D
VDD = 50 Vdc, f = 1090 MHz
IDQ1 =80 mA, IDQ2 = 150 mA
Pulse Width = 128 sec
Duty Cycle = 10%
VDD = 50 Vdc, f = 1090 MHz
IDQ1 =80 mA, IDQ2 = 150 mA
Pulse Width =128 sec
Duty Cycle = 10%
f
MHz
Zsource
Zload
1090
36.7 -- j29
1.3 + j0.60
Zsource = Test circuit input impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured from
drain to ground.
Figure 9. Series Equivalent Source and Load Impedance — 1090 MHz
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Zsource
Zload
50 
50 


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