TLP206G datasheet(3/6 Pages) TOSHIBA

Part #	TLP206G

Description	TOSHIBA Photocoupler GaAs Ired & Photo-MOS FET

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Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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3 / 6 page

TLP206G

2002-09-25

3

Individual Electrical Characteristics (Ta = 25°C)

Characteristic

Symbol

Test Condition

Min.

Typ.

Max.

Unit

Forward voltage

VF

IF = 10 mA

1.0

1.15

1.3

V

Reverse current

IR

VR = 5 V

—

10

µA

Capacitance

CT

V = 0, f = 1 MHz

—

30

—

pF

Off

-state current

IOFF

VOFF = 350 V

—

1

µA

Capacitance

COFF

V = 0,f = 1MHZ

—

40

—

pF

Coupled Electrical Characteristics (Ta = 25°C)

Characteristic

Symbol

Test Condition

MIn.

Typ.

Max.

Unit

Trigger LED current

IFT

ION = 120 mA

—

1

3

mA

On

-state resistance

RON

ION = 120 mA, IF = 5 mA

—

22

35

Ω

Isolation Characteristics (Ta = 25°C)

Characteristic

Symbol

Test Condition

Min.

Typ.

Max.

Unit

Capacitance input to output

CS

VS = 0, f = 1 MHz

—

0.8

—

pF

Isolation resistance

RS

VS = 500 V, R.H. ≤ 60%

5×10

10

14

—

Ω

AC, 1 minute

1500

—

AC, 1 second, in oil

—

3000

—

Vrms

Isolation voltage

BVS

DC, 1 minute, in oil

—

3000

—

Vdc

Switching Characteristics (Ta = 25°C)

Characteristic

Symbol

Test Condition

Min.

Typ.

Max.

Unit

Turn

-on time

tON

—

0.3

1

Turn

-off time

tOFF

RL = 200Ω

(Note 3)

VDD = 20 V, IF = 5 mA

—

0.1

1

ms

(Note 3): Switching time test circuit

1, 3

VDD

VOUT

RL

5, 7

IF

6, 8

2, 4

tOFF

tON

10%

90%

VOUT

IF

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