SUY50N03-10CP datasheet(1/5 Pages) VISHAY

Part #	SUY50N03-10CP

Description	N-Channel 30-V (D-S), 175C, MOSFET PWM Optimized

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Manufacturer	VISHAY [Vishay Siliconix]

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FEATURES

D TrenchFETr Power MOSFETS

D PWM Optimized for High Efficiency

APPLICATIONS

D Buck Converter

– High Side

– Low Side

D Synchronous Rectifier

– Secondary Rectifier

SUY50N03-10CP

Vishay Siliconix

New Product

Document Number: 71700

S-05396—Rev. A, 21-Jan-02

www.vishay.com

1

N-Channel 30-V (D-S), 175

_C, MOSFET PWM Optimized

PRODUCT SUMMARY

V(BR)DSS (V)

rDS(on) (W)

ID (A)a

0.010 @ VGS = 10 V

15

30

0.012 @ VGS = 4.5 V

18

D

G

S

N-Channel MOSFET

Order Number:

SUY50N03-10CP

TO-251

S

GD

Top View

Notes:

1. Drain Connected to Tab

2. Leads Trimmed to 0.092”

" 0.003”

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

30

Gate-Source Voltage

VGS

"20

V

_

TA = 25_C

15

Continuous Drain Current (TJ = 175_C)a

TA = 100_C

ID

14

Pulsed Drain Current

IDM

100

A

Continuous Source Current (Diode Conduction)a

IS

20

TC = 25_C

71b

Maximum Power Dissipation

TA = 25_C

PD

8.3a

W

Operating Junction and Storage Temperature Range

TJ, Tstg

–55 to 175

_C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t

v 10 sec

15

18

Maximum Junction-to-Ambienta

Steady State

RthJA

40

50

_C/W

Maximum Junction-to-Case

Steady State

RthJC

1.75

2.1

Notes:

a

Surface mounted on 1” x 1” FR4 Board, t

v 10 sec.

b

See SOA curve for voltage derating.

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SUY50N03-10CP Datasheet(PDF) 1 Page - Vishay Siliconix

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