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SUM110N04-03 Datasheet(PDF) 4 Page - Vishay Siliconix

Part No. SUM110N04-03
Description  N-Channel 40-V (D-S) 200C MOSFET
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
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SUM110N04-03 Datasheet(HTML) 4 Page - Vishay Siliconix

   
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SUM110N04-03
Vishay Siliconix
www.vishay.com
4
Document Number: 71745
S-31061—Rev. C, 26-May-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Drain Source Breakdown vs.
Junction Temperature
Avalanche Current vs. Time
0.0
0.3
0.6
0.9
1.2
1.5
1.8
2.1
- 50 - 25
0
25
50
75
100 125 150 175 200
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
TJ - Junction Temperature (_C)
VSD - Source-to-Drain Voltage (V)
100
10
1
0.3
0.6
0.9
1.2
VGS = 10 V
ID = 30 A
TJ = 25_C
TJ = 150_C
0
40
44
48
52
56
- 50 - 25
0
25
50
75
100 125 150 175 200
TJ - Junction Temperature (_C)
tin (Sec)
1000
10
0.00001
0.001
0.1
1
0.1
0.01
IAV (A) @ TA = 150_C
ID = 10 mA
100
1
IAV (A) @ TA = 25_C
0.0001


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