DG884

Vishay Siliconix

Document Number: 70071

S-52433—Rev. G, 20-Dec-04

www.vishay.com

5

Test Conditions

Unless Specified

A Suffix

−55 to 125_C

D Suffix

−40 to 85_C

Parameter

Symbol

V+ = 15 V, V− = −3 V

SALVO, CS, WR, I/O = 0.8 V

Unit

Power Supplies

Positive Supply Current

I+

Room

Full

1.5

3

6

3

6

mA

Negative Supply Current

I−

All Inputs At GND or 2 V

RS = 2 V

Room

Full

−1.5

−3

−5

−3

−5

mA

Digital GND Supply Current

RS = 2 V

Full

−275

−750

−750

mA

Logic Supply Current

Full

200

500

500

mA

OS

V+ to V−

See Operating Voltage Range

Full

13

20

13

20

Functional Operating Supply Volt-

V− to GND

See Operating Voltage Range

(Typical Characteristics)

page 6

Full

−5.5

0

−5.5

0

V

V+ to GND

(yp

)

page 6

Full

10

20

10

20

Minimum Input Timing Requirements

Address Write Time

Full

20

50

50

Minimum WR Pulse Width

Full

50

100

100

Write Address Time

Full

−10

10

10

Chip Select Write Time

Full

50

100

100

Write Chip Select Time

Full

25

75

75

Minimum SALVO

Pulse Width

Full

50

100

100

SALVO Write Time

See Figure 1

Full

−10

10

10

ns

Write SALVO Time

See Figure 1

Room

20

50

ns

Input Output Time

Room

150

200

200

Address Output Time

Room

150

200

200

Chip Select Output Time

Room

150

200

200

Chip Select Address Time

Room

60

100

Reset to SALVO

Full

50

50

I/O Address Input Time

Room

50

Notes:

a.

Refer to PROCESS OPTION FLOWCHART.

b.

Room = 25_C, Full = as determined by the operating temperature suffix.

c.

Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.

d.

The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.

e.

Guaranteed by design, not subject to production test.