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STP12NK80Z Datasheet(PDF) 4 Page - STMicroelectronics

Part No. STP12NK80Z
Description  N-CHANNEL 800V - 0.65 OHM - 10.5A TO-220 / D2PAK / TO-247 Zener-Protected SuperMESH Power MOSFET
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP12NK80Z Datasheet(HTML) 4 Page - STMicroelectronics

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2 Electrical characteristics
STB12NK80Z - STP12NK80Z - STW12NK80Z
4/15
Table 7.
Source drain diode
Table 8.
Gate-source zener diode
(1) ISD ≤10.5 A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
(2) Pulse width limited by safe operating area
(3) Limited only by maximum temperature allowed
(4) Pulsed: pulse duration = 300µs, duty cycle 1.5%
(5) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0
to 80%VDSS
(6)The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but
also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this
respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDMNote 2
Source-drain Current
Source-drain Current (pulsed)
10.5
42
A
A
VSDNote 4
Forward on Voltage
ISD=10.5 A, VGS=0
1.6
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD=10.5A, di/dt = 100A/µs,
VDD=100 V, Tj=150°C
635
5.9
18.5
ns
µC
A
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
BVGSO
Note 6
Gate-Source
Breakdown Voltage
Igs=±1mA
(Open Drain)
30
V


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