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SSM5P05FU Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part No. SSM5P05FU
Description  TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
Download  5 Pages
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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SSM5P05FU Datasheet(HTML) 2 Page - Toshiba Semiconductor

   
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SSM5P05FU
2002-01-24
2
Marking
Equivalent Circuit (top view)
Electrical Characteristics (Ta
==== 25°C) (Q1, Q2 common)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±12 V, VDS = 0
¾
¾
±1
mA
Drain-Source breakdown voltage
V (BR) DSS
ID = -1 mA, VGS = 0
-20
¾
¾
V
Drain cut-off current
IDSS
VDS = -20 V, VGS = 0
¾
¾
-1
mA
Gate threshold voltage
Vth
VDS = -3 V, ID = -0.1 mA
-0.6
¾
-1.1
V
Forward transfer admittance
ïYfsï
VDS = -3 V, ID = -50 mA
(Note2)
100
¾
¾
mS
ID = -100 mA, VGS = -4 V (Note2)
¾
2.1
3.3
Drain-Source ON resistance
RDS (ON)
ID = -50 mA, VGS = -2.5 V (Note2)
¾
3.2
4.0
W
Input capacitance
Ciss
¾
27
¾
pF
Reverse transfer capacitance
Crss
¾
7
¾
pF
Output capacitance
Coss
VDS = -3 V, VGS = 0, f = 1 MHz
¾
21
¾
pF
Turn-on time
ton
¾
70
¾
Switching time
Turn-off time
toff
VDD = -3 V, ID = -50 mA,
VGS = 0~-2.5 V
¾
70
¾
ns
Note2: Pulse test
Switching Time Test Circuit (Q1, Q2 Common)
Precaution
Vth can be expressed as voltage between gate and source when low operating current value is ID = -100 mA for
this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires
lower voltage than Vth. (Relationship can be established as follows: VGS (off) < Vth < VGS (on) )
Please take this into consideration for using the device. VGS recommended voltage of -2.5 V or higher to turn on
this product.
D H
5
4
1
2
3
Q1
Q2
54
123
(c)VOUT
VDD = -3 V
Duty <= 1%
VIN: tr, tf < 5 ns
(Zout = 50 W)
Common Source
Ta
= 25°C
VDD
OUT
IN
0
-2.5 V
10
ms
RL
(b) VIN
ton
90%
10%
-2.5 V
0 V
90%
10%
toff
tr
tf
VDS (ON)
VDD
(a) Test circuit


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