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SI7900EDN Datasheet(PDF) 1 Page - Vishay Siliconix

Part No. SI7900EDN
Description  Dual N-Channel 20-V (D-S) MOSFET, Common Drain
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI7900EDN Datasheet(HTML) 1 Page - Vishay Siliconix

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FEATURES
D TrenchFETr Power MOSFETS: 1.8-V Rated
D New PowerPakt Package
– Low-Thermal Resistance, RthJC
– Low 1.07-mm Profile
D 3000-V ESD Protection
APPLICATIONS
D Protection Switch for 1-2 Li-ion Batteries
Si7900EDN
Vishay Siliconix
New Product
Document Number: 71425
S-03369—Rev. A, 02-Apr-01
www.vishay.com
1
Dual N-Channel 20-V (D-S) MOSFET, Common Drain
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)
0.026 @ VGS = 4.5 V
9
20
0.031 @ VGS = 2.5 V
8
0.039 @ VGS = 1.8 V
7
D
G1
S1
D
G2
S2
N-Channel
N-Channel
2.4 k
W
2.4 k
W
1
2
3
4
5
6
7
8
S1
G1
S2
G2
D
D
D
D
3.30 mm
3.30 mm
PowerPAK
t 1212-8
Bottom View
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
VDS
20
Gate-Source Voltage
VGS
"12
V
_
TA = 25_C
9
6
Continuous Drain Current (TJ = 150_C)a
TA = 85_C
ID
6.4
4.3
Pulsed Drain Current
IDM
30
A
Continuous Source Current (Diode Conduction)a
IS
2.9
1.4
TA = 25_C
3.2
1.5
Maximum Power Dissipationa
TA = 85_C
PD
1.7
0.79
W
Operating Junction and Storage Temperature Range
TJ, Tstg
–55 to 150
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t
v 10 sec
30
38
Maximum Junction-to-Ambienta
Steady State
RthJA
65
82
_C/W
Maximum Junction-to-Case
Steady State
RthJC
1.9
2.4
C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.


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