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RIC7113A4 Datasheet(PDF) 4 Page - International Rectifier

Part No. RIC7113A4
Description  RADIATION HARDENED HIGH AND LOW SIDE GATE DRIVER
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

RIC7113A4 Datasheet(HTML) 4 Page - International Rectifier

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RIC7113A4
Radiation characteristics
Radiation Performance
International Rectifier Radiation Hardened gate drivers are tested to verify their hardness capability. The
hardness assurance program at International rectifier uses a Cobalt-60 (60 Co) source and heavy ion
irradiation.
Every wafer shall be tested per MIL-STD-883, Method 1019, test condition A “Ionizing Radiation
(Total Dose) Test Procedure”.
Both pre- and post- irradiation performances are tested and specified using the same drive circuitry and test
conditions to provide a direct comparison.
For Static Irradiation Test Conditions refer to figure 7.
Static Electrical Characteristics
Tj = 25°C
Symbol
Parameter
100K Rads (Si)
Units
Test Conditions
Min
Max
V
IH
Logic “1” Input Voltage
3.1
VDD = 5V
6.4
VDD = 10V
9.5
VDD = 15V
12.5
VDD = 20V
V
IL
Logic “0” Input Voltage
1.8
VDD = 5V
3.8
VDD = 10V
6.0
VDD = 15V
8.3
VDD = 20V
VOH
High Level Output Voltage, VBIAS - VO
1.2
VIN =VIH, IO = 0A
VOL
Low Level Output Voltage, VO
0.1
VIN =VIH, IO = 0A
ILK
Offset Supply Leakage Current
50
VB =VS = 400A
IQBS
Quiescent VBS Supply Current
230
VIN =0V or VDD
IQCC
Quiescent VCC Supply Current
340
VIN =0V or VDD
IQDD
Quiescent VDD Supply Current
30
VIN =0V or VDD
IIN+
Logic “1” Input Bias Current
40
VIN =VDD
IIN-
Logic “0” Input Bias Current
1.0
VIN =0V
VBSUV+
VBS Supply Undervoltage Positive
7.5
9.7
Going Threshold
VBSUV-
VBS Supply Undervoltage Negative
7.0
9.4
Going Threshold
VCCUV+
VCC Supply Undervoltage Positive
7.4
9.9
Going Threshold
VCCUV-
VCC Supply Undervoltage Negative
7.0
9.6
Going Threshold
IO+
Output High Short Circuit Pulsed
2.0
VO =0V, VIN =VDD
Current
PW < 10 µs
IO-
Output Low Short Circuit Pulsed
2.0
VO =15V, VIN =0V
Current
PW < 10 µs
µA
V
V
A
V


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