DIM

Millimetres

Tol.

Inches

Tol.

A

19.05

0.50

0.75

0.020

B

10.77

0.13

0.424

0.005

C

45°

5°

45°

5°

D

9.78

0.13

0.385

0.005

E

5.71

0.13

0.225

0.005

F

27.94

0.13

1.100

0.005

G

1.52R

0.13

0.060R

0.005

H

10.16

0.13

0.400

0.005

I

22.22

MAX

0.875

MAX

J

0.13

0.02

0.005

0.001

K

2.72

0.13

0.107

0.005

M

1.70

0.13

0.067

0.005

N

5.08

0.50

0.200

0.020

O

34.03

0.13

1.340

0.005

P

1.61R

0.08

0.064R

0.003

D5028UK

Document Number 3140

Issue 1

Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed

to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.

Semelab encourages customers to verify that datasheets are current before placing orders.

Power Dissipation

Drain – Source Breakdown Voltage*

Gate – Source Breakdown Voltage*

Drain Current*

Storage Temperature

Maximum Operating Junction Temperature

438W

125V

±20V

18A

–65 to 150°C

200°C

MECHANICAL DATA

M

K

J

I

O

N

A

C

(2 pls)

D

F

E

(4 pls)

B

G

(typ)

P

(2 pls)

1

5

4

3

2

H

GOLD METALLISED

MULTI-PURPOSE SILICON

DMOS RF FET

300W – 50V – 175MHz

PUSH–PULL

FEATURES

• SIMPLIFIED AMPLIFIER DESIGN

• SUITABLE FOR BROAD BAND APPLICATIONS

• SIMPLE BIAS CIRCUITS

• LOW NOISE

• HIGH GAIN – 13 dB MINIMUM

DR

PIN 1

SOURCE (COMMON)

PIN 2

DRAIN 1

PIN 3

DRAIN 2

PIN 4

GATE 2

PIN 5

GATE 1

APPLICATIONS

• VHF/UHF COMMUNICATIONS

from 1 MHz to 200 MHz

METAL GATE RF SILICON FET

TetraFET

* Per Side