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LMV358AIDGKR Datasheet(PDF) 6 Page - Texas Instruments |
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LMV358AIDGKR Datasheet(HTML) 6 Page - Texas Instruments |
6 / 38 page 6 LMV321A, LMV358A, LMV324A SBOS923B – DECEMBER 2017 – REVISED JUNE 2018 www.ti.com Product Folder Links: LMV321A LMV358A LMV324A Submit Documentation Feedback Copyright © 2017–2018, Texas Instruments Incorporated (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report. (2) Package is preview only. 6.4 Thermal Information: LMV321A THERMAL METRIC (1) LMV321A UNIT DBV (SOT-23)(2) DCK (SC70)(2) 5 PINS 5 PINS RθJA Junction-to-ambient thermal resistance 232.8 239.6 °C/W RθJC(top) Junction-to-case (top) thermal resistance 153.8 148.5 °C/W RθJB Junction-to-board thermal resistance 100.9 82.3 °C/W ψJT Junction-to-top characterization parameter 77.2 54.5 °C/W ψJB Junction-to-board characterization parameter 100.4 81.8 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance N/A N/A °C/W (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report. (2) Package is preview only. 6.5 Thermal Information: LMV358A THERMAL METRIC(1) LMV358A UNIT D (SOIC) DGK (VSSOP) PW (TSSOP)(2) 8 PINS 8 PINS 8 PINS RθJA Junction-to-ambient thermal resistance 147.4 201.2 205.8 °C/W RθJC(top) Junction-to-case (top) thermal resistance 94.3 85.7 106.7 °C/W RθJB Junction-to-board thermal resistance 89.5 122.9 133.9 °C/W ψJT Junction-to-top characterization parameter 47.3 21.2 34.4 °C/W ψJB Junction-to-board characterization parameter 89 121.4 132.6 °C/W (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report. (2) Package is preview only. 6.6 Thermal Information: LMV324A THERMAL METRIC(1) LMV324A UNIT D (SOIC)(2) PW (TSSOP)(2) 14 PINS 8 PINS RθJA Junction-to-ambient thermal resistance 102.1 148.3 °C/W RθJC(top) Junction-to-case (top) thermal resistance 56.8 68.1 °C/W RθJB Junction-to-board thermal resistance 58.5 92.7 °C/W ψJT Junction-to-top characterization parameter 20.5 16.9 °C/W ψJB Junction-to-board characterization parameter 58.1 91.8 °C/W |
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