IXYS reserves the right to change limits, test conditions, and dimensions.

Symbol

Test Conditions

Characteristic Values

(T

min.

typ.

max.

g

fs

I

25

S

Pulse test, t

≤ 300 µs, duty cycle ≤ 2 %

C

ies

2700

pF

C

oes

V

240

pF

C

res

50

pF

Q

g

110

nC

Q

ge

I

22

nC

Q

gc

40

nC

t

d(on)

25

ns

t

ri

20

ns

t

d(off)

85

170

ns

t

fi

55

ns

E

off

0.32

0.75 mJ

t

d(on)

25

ns

t

ri

25

ns

E

on

1mJ

t

d(off)

110

ns

t

fi

100

ns

E

off

0.85

mJ

R

thJC

0.90 K/W

R

thCK

0.15

K/W

Reverse Diode (FRED)

Characteristic Values

(T

Symbol

Test Conditions

min.

typ.

max.

V

F

I

F

= I

T

1.6

V

t

≤ 300 µs, duty cycle d ≤ 2 %

T

J

= 25

°C

2.5

V

I

RM

I

F

= I

A

t

rr

V

T

100

ns

I

F

= 1 A; -di/dt = 100 A/

µs; V

T

25

°C25

ns

R

thJC

1.15 K/W

Inductive load, T

°°°°C

I

V

Remarks: Switching times may

increase for V

higher T

Inductive load, T

°°°°C

I

V

Remarks: Switching times may

increase for V

higher T

IXGR 32N60CD1

Note: 1. I

ISOPLUS 247 OUTLINE

Dim.

Millimeter

Inches

Min.

Max.

Min. Max.

A

4.83

5.21

.190 .205

A

1

2.29

2.54

.090 .100

A

2

1.91

2.16

.075 .085

b

1.14

1.40

.045 .055

b

1

1.91

2.13

.075 .084

b

2

2.92

3.12

.115 .123

C

0.61

0.80

.024 .031

D

20.80

21.34

.819 .840

E

15.75

16.13

.620 .635

e

5.45 BSC

.215 BSC

L

19.81

20.32

.780 .800

L1

3.81

4.32

.150 .170

Q

5.59

6.20

.220 .244

R

4.32

4.83

.170 .190

1 Gate, 2 Drain (Collector)

3 Source (Emitter)

4 no connection

IXYS MOSFETs and IGBTs are covered by

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065B1

6,683,344

6,727,585

one or moreof the following U.S. patents:

4,850,072

5,017,508

5,063,307

5,381,025

6,259,123B1

6,534,343

6,710,405B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463