Manufacturer | Part # | Datasheet | Description |
Toshiba Semiconductor |
HN2E04F
|
335Kb / 8P |
TOSHIBA MULTI CHIP DISCRETE DEVICE
|
HN7G02FU
|
163Kb / 6P |
Multi Chip Discrete Device
|
HN2E05J
|
250Kb / 6P |
MULTI CHIP DISCRETE DEVICE Super High Speed Switching Application
|
HN2E01F
|
506Kb / 7P |
MULTI CHIP DISCRETE DEVICE Super High Speed Switching Application
|
HN2E04F
|
523Kb / 8P |
MULTI CHIP DISCRETE DEVICE Super High Speed Switching Application
|
Littelfuse |
P1200S_L
|
146Kb / 3P |
LCAS Asymmetrical Discrete Device
|
Toshiba Semiconductor |
HN4C05JU
|
166Kb / 3P |
MULTI CHIP DISCRETE DEVICE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS FOR MUTING AND SWITCHING APPLICATIONS)
|
TPCF8B01
|
81Kb / 4P |
TOSHIBA Multi-Chip Device Silicon P Channel MOS Type (U-MOS III) / Schottky Barrier Diode
|
TPCP8J01
|
311Kb / 9P |
TOSHIBA Multi-chip Device Silicon P Channel MOS Type (U-MOSIV) /Silicon NPN Epitaxial Type
|
TPCP8J01
|
189Kb / 5P |
TOSHIBA Multi-chip Device Silicon P Channel MOS Type (U-MOSIV) /Silicon NPN Epitaxial Type
|