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PRFMB150W12 Datasheet(PDF) 4 Page - Kyocera Kinseki Corpotation |
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PRFMB150W12 Datasheet(HTML) 4 Page - Kyocera Kinseki Corpotation |
4 / 4 page Module 0 25 50 75 100 125 150 0 10 20 30 40 50 Collector Current IC (A) Fig.7- Collector Current vs. Switching Loss EOFF EON VCC=600V RG=5.1 VGE=±15V Tj=125°C Tj=150°C Inductive Load ERR 3 10 30 100 1 3 10 30 100 300 1000 Series Gate Impedance RG ( ) Fig.8- Series Gate Impedance vs. Switching Loss EOFF EON VCC=600V IC=150A VGE=±15V Tj=125°C Tj=150°C Inductive Load ERR 0 25 50 75 100 125 150 10 30 100 300 1000 Forward Current IF (A) Fig.10- Reverse Recovery Characteristics of FWD & Inverse Diode (Typical) IRrM trr VCC=600V, VGE=±15V, RG=5.1 Tj=125°C Tj=150°C 0 200 400 600 800 1000 1200 1400 1600 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 1000 Collector to Emitter Voltage V CE (V) Fig.11- Reverse Bias Safe Operating Area RG=5.1 , VGE=±15V, Tj<150°C (Chip level) 0 1 2 3 4 0 50 100 150 200 250 300 Forward Voltage V F (V) Fig.9- Forward Characteristics of FWD (Typical) Tj=25°C Tj=125°C Tj=150°C 10 -5 10 -4 10 -3 10 -2 10 -1 1 10 1 1x10 -3 3x10 -3 1x10 -2 3x10 -2 1x10 -1 3x10 -1 1 3 Time t (s) Fig.12- Transient Thermal Impedance TC=25°C 1 Sh ot Pul s e FWD IGBT |
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