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FW250 Datasheet(PDF) 2 Page - Sanyo Semicon Device

Part # FW250
Description  N-Channl Silicon MOSFET Ultrahigh-Speed Switching Applications
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Manufacturer  SANYO [Sanyo Semicon Device]
Direct Link  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

FW250 Datasheet(HTML) 2 Page - Sanyo Semicon Device

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FW250
No.7548-2/4
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Input Capacitance
Ciss
VDS=20V, f=1MHz
300
pF
Output Capacitance
Coss
VDS=20V, f=1MHz
54
pF
Reverse Transfer Capacitance
Crss
VDS=20V, f=1MHz
34
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
8
ns
Rise Time
tr
See specified Test Circuit.
23
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
30
ns
Fall Time
tf
See specified Test Circuit.
40
ns
Total Gate Charge
Qg
VDS=30V, VGS=10V, ID=3A
7.8
nC
Gate-to-Source Charge
Qgs
VDS=30V, VGS=10V, ID=3A
2.4
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=30V, VGS=10V, ID=3A
1.7
nC
Diode Forward Voltage
VSD
IS=3A, VGS=0
0.86
1.2
V
Switching Time Test Circuit
PW=10
µs
D.C.
≤1%
P.G
50
G
S
D
ID=3A
RL=10Ω
VDD=30V
VOUT
FW250
VIN
10V
0V
VIN
Gate-to-Source Voltage, VGS -- V
Drain-to-Source Voltage, VDS -- V
Gate-to-Source Voltage, VGS -- V
Ambient Temperature, Ta --
°C
0
0
2.0
2.5
3.0
0.2
0.3
0.1
1.0
1.5
0.5
0
3
2
6
4
5
1
0.7
0.6
ID -- VDS
IT06041
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
ID -- VGS
IT06042
VDS=10V
0.4
0.5
V GS
=3.5V
02
4
6
8
80
100
120
140
20
40
60
160
180
200
220
240
260
280
300
0
80
100
120
140
20
40
60
160
180
200
220
240
260
280
300
0
12
10
14
16
RDS(on) -- VGS
IT06043
RDS(on) -- Ta
IT06044
--60
--40
--20
0
20
40
60
80
100
120
140
Ta=25
°C
ID=1.5A
3A
I D
=1.5A,
V GS
=4V
ID=3.0A,
VGS
=10V


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