EN29F08090TI datasheet(8/37 Pages) ETC

Part #	EN29F08090TI

Description	8 Megabit (1024K x 8-bit) Flash Memory

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EN29F080

Rev. C, Issue Date: 2001/07/05

Hardware Data protection

The command sequence requirement of unlock cycles for programming or erasing provides data

protection against inadvertent writes as seen in the Command Definitions table. Additionally, the

following hardware data protection measures prevent accidental erasure or programming, which might

otherwise be caused by false system level signals during Vcc power up and power down transitions, or

from system noise.

Low VCC Write Inhibit

When Vcc is less than VLKO, the device does not accept any write cycles. This protects data during Vcc

power up and power down. The command register and all internal program/erase circuits are disabled,

and the device resets. Subsequent writes are ignored until Vcc is greater than VLKO. The system must

provide the proper signals to the control pins to prevent unintentional writes when Vcc is greater than

VLKO.

Write Pulse “Glitch” protection

Noise pulses of less than 5 ns (typical) on OE , CE or WE do not initiate a write cycle.

Logical Inhibit

If CE =VIH or WE=VIH, writing is inhibited. To initiate a write cycle, CE and WE must be a logical

“zero”. If CE , WE , and OE are all logical zero (not recommended usage), it will be considered a

write.

Power-up Write Inhibit

During power-up, the device automatically resets to READ mode and locks out write cycles. Even

with CE = VIL, WE = VIL and OE = VIH, the device will not accept commands on the rising edge of

WE .

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