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CNY75GB Datasheet(PDF) 4 Page - Vishay Siliconix

Part No. CNY75GB
Description  Optocoupler with Phototransistor Output
Download  12 Pages
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

CNY75GB Datasheet(HTML) 4 Page - Vishay Siliconix

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CNY75(G) Series
Vishay Semiconductors
Rev. A4, 11–Jan–99
4 (12)
Maximum Safety Ratings (according to VDE 0884) see figure 1
This device is used for protective separation against electrical shock only within the maximum safety ratings.
This must be ensured by using protective circuits in the applications.
Input (Emitter)
Parameters
Test Conditions
Symbol
Value
Unit
Forward current
Isi
130
mA
Output (Detector)
Parameters
Test Conditions
Symbol
Value
Unit
Power dissipation
Tamb ≤ 25°C
Psi
265
mW
Coupler
Parameters
Test Conditions
Symbol
Value
Unit
Rated impulse voltage
VIOTM
6
kV
Safety temperature
Tsi
150
°C
Insulation Rated Parameters (according to VDE 0884)
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
Partial discharge test voltage –
Routine test
100%, ttest = 1 s
Vpd
1.6
kV
Partial discharge test voltage – tTr = 60 s, ttest = 10 s,
VIOTM
6
kV
gg
Lot test (sample test)
Tr
test
(see figure 2)
Vpd
1.3
kV
Insulation resistance
VIO = 500 V
RIO
1012
W
VIO = 500 V,
Tamb ≤ 100°C
RIO
1011
W
VIO = 500 V,
Tamb ≤ 150°C
(construction test only)
RIO
109
W
0
25
50
75
100
125
150
175
200
225
250
275
0
25
50
75
100
125
150
175
Tamb – Ambient Temperature ( °C )
95 10923
Psi (mW)
Isi (mA)
Figure 1. Derating diagram
V
IOTM
V
Pd
V
IOWM
V
IORM
V
t
4
t
3
t
test
t
stres
t
2
t
1
t
0
13930
t
Tr
= 60 s
t
1
, t
2
= 1 to 10 s
t
3
, t
4
= 1 s
t
test
= 10 s
t
stres
= 12 s
Figure 2. Test pulse diagram for sample test according to
DIN VDE 0884


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