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BS62LV2009 Datasheet(PDF) 3 Page - Brilliance Semiconductor

Part No. BS62LV2009
Description  Very Low Power/Voltage CMOS SRAM 256K X 8 bit
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Maker  BSI [Brilliance Semiconductor]
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BS62LV2009 Datasheet(HTML) 3 Page - Brilliance Semiconductor

   
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R0201-BS62LV2009
Revision 1.1
Jan.
2004
3
BSI
SYMBOL
PARAMETER
TEST CONDITIONS
MIN.
TYP. (1)
MAX.
UNITS
VDR
Vcc for Data Retention
CE1 ≧ Vcc - 0.2V or CE2 ≦ 0.2V,
VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V
1.5
--
--
V
ICCDR
(3)
Data Retention Current
CE1 ≧ Vcc - 0.2V or CE2 ≦ 0.2V,
VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V
--
0.1
1.0
uA
tCDR
Chip Deselect to Data
Retention Time
0
--
--
ns
tR
Operation Recovery Time
See Retention Waveform
TRC
(2)
--
--
ns
1. Typical characteristics are at TA = 25oC.
2. Fmax = 1/t
RC .
3. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.
4. IccsB1 _Max. is 3uA at Vcc=3.0V and TA=70oC.
5. Icc_Max. is 22mA(@55ns) /17mA(@70ns) at Vcc=3.0V and TA=0~70oC.
DATA RETENTION CHARACTERISTICS ( TA = -40oC to + 85oC )
1. Vcc = 1.5V, TA = + 25OC
2. t
RC = Read Cycle Time
3. IccDR_MAX. is 0.7uA at TA=70oC.
DC ELECTRICAL CHARACTERISTICS ( TA = -40oC to + 85oC )
LOW VCC DATA RETENTION WAVEFORM (1) ( CE1 Controlled )
CE1
Data Retention Mode
Vcc
t CDR
Vcc
t R
VIH
VIH
Vcc
VDR
1.5V
CE1
Vcc - 0.2V
LOW VCC DATA RETENTION WAVEFORM (2) ( CE2 Controlled )
CE2
Data Retention Mode
Vcc
t CDR
Vcc
t R
VIL
VIL
Vcc
VDR ≧ 1.5V
CE2 ≦ 0.2V
BS62LV2009
PARAMETER
NAME
PARAMETER
TEST CONDITIONS
MIN.
TYP. (1) MAX.
UNITS
VIL
Guaranteed Input Low
Voltage
(3)
Vcc=3.0V
-0.5
--
0.8
V
VIH
Guaranteed Input High
Voltage
(3)
Vcc=3.0V
2.0
--
Vcc+0.3
V
IIL
Input Leakage Current
Vcc = Max, VIN= 0V to Vcc
--
--
1
uA
ILO
Output Leakage Current
Vcc = Max, CE1= VIH, CE2= VIL, or
OE = VIH, VI/O = 0V to Vcc
--
--
1
uA
VOL
Output Low Voltage
Vcc = Max, IOL = 2.0mA
Vcc=3.0V
--
--
0.4
V
VOH
Output High Voltage
Vcc = Min, IOH = -1.0mA
Vcc=3.0V
2.4
--
--
V
70ns
18
ICC
(5)
Operating Power Supply
Current
CE1 = VIL, CE2 = VIH,
IDQ = 0mA, F = Fmax
(2)
3.0 V
55ns
--
--
23
mA
ICCSB
Standby Current-TTL
CE1 = VIH, or CE2 = VIL,
IDQ = 0mA,
Vcc=3.0V
--
--
0.5
mA
ICCSB1
(4)
Standby Current-CMOS
CE1≧Vcc-0.2V or CE2≦0.2V,
VIN≧Vcc-0.2V or VIN≦0.2V
Vcc=3.0V
--
0.3
5
uA


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