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AON6994 Datasheet(PDF) 2 Page - Alpha & Omega Semiconductors |
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AON6994 Datasheet(HTML) 2 Page - Alpha & Omega Semiconductors |
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2 / 10 page  Symbol Min Typ Max Units BVDSS 30 V VDS=30V, VGS=0V 1 TJ=55°C 5 IGSS ±100 nA VGS(th) Gate Threshold Voltage 1.4 1.8 2.2 V 4.3 5.2 TJ=125°C 6.3 7.6 6.8 8.6 mΩ gFS 67 S VSD 0.71 1 V IS 20 A Ciss 820 pF Coss 340 pF Crss 40 pF Rg 0.6 1.2 1.8 Ω Qg(10V) 13 nC Qg(4.5V) 6.1 nC Qgs 2 nC Qgd 2.4 nC tD(on) 6.5 ns tr 16.5 ns tD(off) 17 ns tf 2.5 ns VDS=VGS, ID=250µA Gate-Body leakage current VGS=4.5V, ID=20A Static Drain-Source On-Resistance Gate Source Charge Gate resistance Forward Transconductance Input Capacitance Maximum Body-Diode Continuous Current VDS=5V, ID=20A Gate Drain Charge Total Gate Charge SWITCHING PARAMETERS VGS=10V, ID=20A mΩ Diode Forward Voltage DYNAMIC PARAMETERS Reverse Transfer Capacitance IS=1A,VGS=0V RDS(ON) VGS=0V, VDS=15V, f=1MHz Turn-On DelayTime Turn-Off Fall Time VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω Turn-On Rise Time Turn-Off DelayTime Output Capacitance VGS=10V, VDS=15V, ID=20A Total Gate Charge f=1MHz Zero Gate Voltage Drain Current Q1 Electrical Characteristics (TJ=25°C unless otherwise noted) ID=250µA, VGS=0V VDS=0V, VGS=±20V µA IDSS STATIC PARAMETERS Parameter Conditions Drain-Source Breakdown Voltage tf 2.5 ns trr 11 ns Qrr 19 nC THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Turn-Off Fall Time Body Diode Reverse Recovery Charge Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs IF=20A, dI/dt=500A/µs A. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation P DSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation P D is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature T J(MAX)=150°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. Rev.1.0: October 2014 www.aosmd.com Page 2 of 10 |
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