251

Silicon Junction FETs (Small Signal)

unit: mm

2SK0662 (2SK662)

Silicon N-Channel Junction FET

For low-frequency amplification

I Features

G High mutual conductance g

m

G Low noise type

G S-mini type package, allowing downsizing of the sets and auto-

matic insertion through the tape/magazine packing.

Parameter

Drain to Source voltage

Gate to Drain voltage

Drain current

Gate current

Allowable power dissipation

Junction temperature

Storage temperature

Symbol

Ratings

30

−30

20

10

150

125

−55 to +125

Unit

V

V

mA

mA

mW

°C

°C

Parameter

Drain to Source cut-off current

Gate to Source leakage current

Gate to Source cut-off voltage

Mutual conductance

Input capacitance (Common Source)

Reverse transfer capacitance (Common Source)

Noise figure

Symbol

NV

Conditions

−30V, V

min

0.5

− 0.1

4

4

max

12

−100

−1.5

Unit

mA

nA

V

mS

pF

pF

mV

Marking Symbol (Example): 1O

typ

14

3.5

60

Runk

Marking Symbol

P

0.5 to 3

1OP

Q

2 to 6

1OQ

R

4 to 12

1OR

1: Source

2: Drain

EIAJ: SC-70

3: Gate

SMini3-G1 Package

Note) The part number in the parenthesis shows conventional part number.

0.3

+0.1

–0.0

1

3

2

(0.65) (0.65)

0.15

+0.10

–0.05

10

°