6

DRV10974

SLVSDN2B – JANUARY 2018 – REVISED JUNE 2018

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Copyright © 2018, Texas Instruments Incorporated

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.2 ESD Ratings

VALUE

UNIT

Electrostatic

discharge

±1000

V

±500

6.3 Recommended Operating Conditions

over operating ambient temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

Supply voltage

4.4

18

V

Voltage

U, V, W

–0.7

18

V

PWM, FR

–0.1

5.5

FG

0.5

18

CS

–0.1

1.8

PGND, GND

–0.1

0.1

RMP, ADV

–0.1

1.8

Current

V1P8 regulator-output current; external load

0

3

mA

–40

85

°C

–40

125

°C

(1)

For more information about traditional and new thermal metrics, see Semiconductor and IC Package Thermal Metrics.

(2)

Advance Information

6.4 Thermal Information

DRV10974

UNIT

PWP (HTSSOP)

16 PINS

16 PINS

Junction-to-ambient thermal resistance

37.8

34.5

°C/W

Junction-to-case (top) thermal resistance

25.2

27

°C/W

Junction-to-board thermal resistance

20.7

13.3

°C/W

Junction-to-top characterization parameter

0.7

0.3

°C/W

Junction-to-board characterization parameter

20.5

13.3

°C/W

Junction-to-case (bottom) thermal resistance

1.9

4

°C/W

6.5 Electrical Characteristics

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

SUPPLY CURRENT

Supply current

5

7

mA

Low power mode

380

µA

UVLO

4.2

4.3

4.4

V

4.5

4.7

4.85

V

400

mV

Charge pump UVLO falling

3.35

3.7

4.05

V

Charge pump UVLO rising

3.65

4.0

4.37

V

Charge pump UVLO hysteresis

330

mV

V1P8 UVLO falling

1.25

1.4

1.55

V

V1P8 UVLO rising

1.35

1.5

1.65

V

V1P8 UVLO hysteresis

100

mV