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NTE65 Datasheet(PDF) 2 Page - NTE Electronics

Part No. NTE65
Description  Silicon NPN Transistor High Voltage, Low Noise for CATV, MATV
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Maker  NTE [NTE Electronics]
Homepage  http://www.nteinc.com
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NTE65 Datasheet(HTML) 2 Page - NTE Electronics

   
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Gmax =
|S21|2
(I – |S11|2) (I – |S22|2)
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Dynamic Characteristics
Current–Gain Bandwidth Product
fT
VCE = 10V, IC = 14mA, f = 0.5GHz
5.0
GHz
Collector–Base Capacitance
Ccb
VCB = 10V, IE = 0, f = 1MHz
0.5
1.0
pF
Functional Tests
Noise Figure
NF
VCE = 10V, IC = 2mA, f = 0.5GHz
2.4
dB
VCE = 10V, IC = 2mA, f = 1.0GHz
3.0
dB
Power Gain at Optimum Noise Figure
GNF
VCE = 10V, IC = 2mA, f = 0.5GHz
15
dB
VCE = 10V, IC = 2mA, f = 1.0GHz
10
dB
Maximum Available Power Gain
Gmax
VCE = 10V, IC = 2mA, f = 0.5GHz
18
dB
(Note 1)
VCE = 10V, IC = 2mA, f = 1.0GHz
12
dB
Note 1.
.197 5.0)
.354 (9.0)
.098 (2.5)
.039 (1.0)
.205 (5.2) Dia Max
.005 (0.15)
.197
(5.0)
.147
(3.75)
Max
Collector
Base
Emitter


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