AON6514

Symbol

Min

Typ

Max

Units

30

V

1

5

100

nA

Gate Threshold Voltage

1.2

1.8

2.2

V

4.1

5

5.6

6.8

6.7

8.5

m

Ω

91

S

0.7

1

V

30

A

951

pF

373

pF

62

pF

0.7

1.5

2.3

Ω

15.7

22.5

nC

7.5

10.5

nC

2.8

nC

3.2

nC

6.25

ns

2.5

ns

t

18.5

ns

Turn-On DelayTime

R

=3

Ω

Turn-On Rise Time

Turn-Off DelayTime

SWITCHING PARAMETERS

Total Gate Charge

Total Gate Charge

Gate Source Charge

Gate Drain Charge

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate resistance

DYNAMIC PARAMETERS

Static Drain-Source On-Resistance

m

Ω

Forward Transconductance

Diode Forward Voltage

Maximum Body-Diode Continuous Current

Parameter

Conditions

STATIC PARAMETERS

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

µA

Gate-Body leakage current

18.5

ns

4

ns

10.2

ns

13.6

nC

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Turn-Off DelayTime

Turn-Off Fall Time

Body Diode Reverse Recovery Time

Power dissipation P

on the user's specific board design.

B. The power dissipation P

dissipation limit for cases where additional heatsinking is used.

C. Single pulse width limited by junction temperature T

E. The static characteristics in Figures 1 to 6 are obtained using <300

µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming

a maximum junction temperature of T

G. The maximum current rating is package limited.

Rev 0: Oct 2011

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