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AON6514 Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors

Part # AON6514
Description  30V N-Channel AlphaMOS
Download  6 Pages
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Manufacturer  AOSMD [Alpha & Omega Semiconductors]
Direct Link  http://www.aosmd.com
Logo AOSMD - Alpha & Omega Semiconductors

AON6514 Datasheet(HTML) 1 Page - Alpha & Omega Semiconductors

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AON6514
30V N-Channel AlphaMOS
General Description
Product Summary
VDS
ID (at VGS=10V)
30A
RDS(ON) (at VGS=10V)
< 5m
RDS(ON) (at VGS = 4.5V)
< 8.5m
Application
100% UIS Tested
100% Rg Tested
Symbol
VDS
VGS
30V
• Latest Trench Power AlphaMOS (αMOS LV) technology
• Very Low RDS(on) at 4.5VGS
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
• DC/DC Converters in Computing, Servers, and POL
• Isolated DC/DC Converters in Telecom and Industrial
V
±20
Gate-Source Voltage
Drain-Source Voltage
30
V
Maximum
Units
Parameter
Absolute Maximum Ratings TA=25°C unless otherwise noted
G
D
S
Top View
1
2
3
4
8
7
6
5
PIN1
DFN5X6
Top View
Bottom View
VGS
IDM
IAS
EAS
VDS Spike
VSPIKE
TJ, TSTG
Symbol
t ≤ 10s
Steady-State
Steady-State
RθJC
Maximum Junction-to-Ambient
A
°C/W
RθJA
24
53
30
Units
Junction and Storage Temperature Range
-55 to 150
°C
Thermal Characteristics
Parameter
Typ
Max
V
±20
Gate-Source Voltage
A
32
Avalanche energy L=0.05mH
C
Avalanche Current
C
18
Continuous Drain
Current
26
23
Power Dissipation
B
PD
A
TA=25°C
IDSM
A
TA=70°C
ID
30
23
TC=25°C
TC=100°C
120
Pulsed Drain Current
C
Continuous Drain
Current
G
mJ
2.6
TA=25°C
TC=25°C
4.1
10
TC=100°C
100ns
36
V
Maximum Junction-to-Case
°C/W
°C/W
Maximum Junction-to-Ambient
A D
3.5
64
5
W
Power Dissipation
A
PDSM
W
TA=70°C
25
Rev 0: Oct 2011
www.aosmd.com
Page 1 of 6


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